Oxidation Kinetics of Hexagonal-Shaped Single-Crystal Silicon Whiskers

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)2791-2795
Journal / PublicationJournal of the American Ceramic Society
Issue number10
Publication statusPublished - Oct 1999
Externally publishedYes


The oxidation kinetics of hexagonal-shaped Si whiskers at high temperature were studied. Si whiskers were oxidized at 1000°C under a partial oxygen pressure of 0.14 atm. Oxide thickness was measured using scanning electron microscopy (SEM). A unique model was developed to describe the oxidation kinetics of hexagonal-shaped fibers. The model takes into account the inward diffusion of oxygen, oxidation reaction at the oxide/Si interface, and the fiber diameter change caused by the molar volume difference between SiO2 and Si. Comparison of the model with experimental data shows good agreement.