Oxidation behavior of PdSi compounds

A. Cros; R. A. Pollak; K. N. Tu

doi:10.1016/0040-6090(83)90565-5

Oxidation behavior of PdSi compounds

A. Cros
, R. A. Pollak
, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

30 Citations (Scopus)

Abstract

The room temperature oxidation of PdSi, Pd₂Si and Pd₄Si has been studied using X-ray photoelectron spectroscopy (X-ray photoemission spectroscopy or electron spectroscopy for chemical analysis). We find that only silicon atoms in these silicides are oxidized and the oxidation of Pd₄Si surfaces is enhanced compared with that of Pd₂Si and PdSi, as is evidenced by both a higher silicon oxidation state and thicker oxide films. This behavior is discussed in terms of silicide stability and a spill-over effect where palladium atoms catalyze molecular oxygen dissociation. © 1983.

Original language	English
Pages (from-to)	221-225
Journal	Thin Solid Films
Volume	104
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(83)90565-5
Publication status	Published - 17 Jun 1983
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Oxidation behavior of PdSi compounds",

abstract = "The room temperature oxidation of PdSi, Pd2Si and Pd4Si has been studied using X-ray photoelectron spectroscopy (X-ray photoemission spectroscopy or electron spectroscopy for chemical analysis). We find that only silicon atoms in these silicides are oxidized and the oxidation of Pd4Si surfaces is enhanced compared with that of Pd2Si and PdSi, as is evidenced by both a higher silicon oxidation state and thicker oxide films. This behavior is discussed in terms of silicide stability and a spill-over effect where palladium atoms catalyze molecular oxygen dissociation. {\textcopyright} 1983.",

author = "A. Cros and Pollak, \{R. A.\} and Tu, \{K. N.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

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doi = "10.1016/0040-6090(83)90565-5",

language = "English",

volume = "104",

pages = "221--225",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Oxidation behavior of PdSi compounds

AU - Cros, A.

AU - Pollak, R. A.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1983/6/17

Y1 - 1983/6/17

N2 - The room temperature oxidation of PdSi, Pd2Si and Pd4Si has been studied using X-ray photoelectron spectroscopy (X-ray photoemission spectroscopy or electron spectroscopy for chemical analysis). We find that only silicon atoms in these silicides are oxidized and the oxidation of Pd4Si surfaces is enhanced compared with that of Pd2Si and PdSi, as is evidenced by both a higher silicon oxidation state and thicker oxide films. This behavior is discussed in terms of silicide stability and a spill-over effect where palladium atoms catalyze molecular oxygen dissociation. © 1983.

AB - The room temperature oxidation of PdSi, Pd2Si and Pd4Si has been studied using X-ray photoelectron spectroscopy (X-ray photoemission spectroscopy or electron spectroscopy for chemical analysis). We find that only silicon atoms in these silicides are oxidized and the oxidation of Pd4Si surfaces is enhanced compared with that of Pd2Si and PdSi, as is evidenced by both a higher silicon oxidation state and thicker oxide films. This behavior is discussed in terms of silicide stability and a spill-over effect where palladium atoms catalyze molecular oxygen dissociation. © 1983.

UR - https://www.scopus.com/pages/publications/0020140630

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0020140630&origin=recordpage

U2 - 10.1016/0040-6090(83)90565-5

DO - 10.1016/0040-6090(83)90565-5

M3 - RGC 21 - Publication in refereed journal

SN - 0040-6090

VL - 104

SP - 221

EP - 225

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Oxidation behavior of PdSi compounds

Abstract

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