Oxidation behavior of PdSi compounds

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)221-225
Journal / PublicationThin Solid Films
Volume104
Issue number1-2
Publication statusPublished - 17 Jun 1983
Externally publishedYes

Abstract

The room temperature oxidation of PdSi, Pd2Si and Pd4Si has been studied using X-ray photoelectron spectroscopy (X-ray photoemission spectroscopy or electron spectroscopy for chemical analysis). We find that only silicon atoms in these silicides are oxidized and the oxidation of Pd4Si surfaces is enhanced compared with that of Pd2Si and PdSi, as is evidenced by both a higher silicon oxidation state and thicker oxide films. This behavior is discussed in terms of silicide stability and a spill-over effect where palladium atoms catalyze molecular oxygen dissociation. © 1983.

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Citation Format(s)

Oxidation behavior of PdSi compounds. / Cros, A.; Pollak, R. A.; Tu, K. N.

In: Thin Solid Films, Vol. 104, No. 1-2, 17.06.1983, p. 221-225.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review