Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • M. T. Wei
  • A. Sharma
  • E. G. Arnault
  • A. Seredinski
  • Y. Mehta
  • K. Watanabe
  • T. Taniguchi
  • F. Amet

Related Research Unit(s)

Detail(s)

Original languageEnglish
Article number023203
Number of pages7
Journal / PublicationPhysical Review Research
Volume4
Issue number2
Online published10 Jun 2022
Publication statusPublished - 2022

Link(s)

Abstract

We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7 K, the junctions appear non-hysteretic with respect to the switching and retrapping currents IC and IR. A small nonzero resistance is observed even around zero-bias current and scales with temperature as dictated by the phase diffusion mechanism. By varying the graphene carrier concentration we are able to confirm that the observed phase diffusion mechanism follows the trend for an overdamped Josephson junction. This is in contrast with the majority of graphene-based junctions which are underdamped and shorted by the environment at high frequencies.

Research Area(s)

  • SUPERCURRENT, CONTACT, VOLTAGE, NOISE

Citation Format(s)

Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions. / Tang, J.; Wei, M. T.; Sharma, A. et al.
In: Physical Review Research, Vol. 4, No. 2, 023203, 2022.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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