Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions

J. Tang; M. T. Wei; A. Sharma; E. G. Arnault; A. Seredinski; Y. Mehta; K. Watanabe; T. Taniguchi; F. Amet; I. Borzenets

doi:10.1103/PhysRevResearch.4.023203

Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions

J. Tang, M. T. Wei, A. Sharma, E. G. Arnault, A. Seredinski, Y. Mehta, K. Watanabe, T. Taniguchi, F. Amet, I. Borzenets^*

^*Corresponding author for this work

Department of Physics

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

3 Citations (Scopus)

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Abstract

We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7 K, the junctions appear non-hysteretic with respect to the switching and retrapping currents I_C and I_R. A small nonzero resistance is observed even around zero-bias current and scales with temperature as dictated by the phase diffusion mechanism. By varying the graphene carrier concentration we are able to confirm that the observed phase diffusion mechanism follows the trend for an overdamped Josephson junction. This is in contrast with the majority of graphene-based junctions which are underdamped and shorted by the environment at high frequencies.

Original language	English
Article number	023203
Number of pages	7
Journal	Physical Review Research
Volume	4
Issue number	2
Online published	10 Jun 2022
DOIs	https://doi.org/10.1103/PhysRevResearch.4.023203
Publication status	Published - 2022

Funding

I.V.B. acknowledges funding from the Texas A&M University. J.T., A.Sh., and I.V.B. acknowledge CityU New Research Initiatives/Infrastructure Support from Central (APRC): 9610395, and the Hong Kong Research Grants Council Projects: (ECS) Projects No. 2301818 and (GRF) No. 11303619. Lithographic fabrication and characterization of the samples performed by E.G.A. and A.S. and were supported by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy, under Award No. DE-SC0002765.

Research Keywords

SUPERCURRENT
CONTACT
VOLTAGE
NOISE

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This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/

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title = "Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions",

abstract = "We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7 K, the junctions appear non-hysteretic with respect to the switching and retrapping currents IC and IR. A small nonzero resistance is observed even around zero-bias current and scales with temperature as dictated by the phase diffusion mechanism. By varying the graphene carrier concentration we are able to confirm that the observed phase diffusion mechanism follows the trend for an overdamped Josephson junction. This is in contrast with the majority of graphene-based junctions which are underdamped and shorted by the environment at high frequencies.",

keywords = "SUPERCURRENT, CONTACT, VOLTAGE, NOISE",

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T1 - Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions

AU - Tang, J.

AU - Wei, M. T.

AU - Sharma, A.

AU - Arnault, E. G.

AU - Seredinski, A.

AU - Mehta, Y.

AU - Watanabe, K.

AU - Taniguchi, T.

AU - Amet, F.

AU - Borzenets, I.

PY - 2022

Y1 - 2022

N2 - We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7 K, the junctions appear non-hysteretic with respect to the switching and retrapping currents IC and IR. A small nonzero resistance is observed even around zero-bias current and scales with temperature as dictated by the phase diffusion mechanism. By varying the graphene carrier concentration we are able to confirm that the observed phase diffusion mechanism follows the trend for an overdamped Josephson junction. This is in contrast with the majority of graphene-based junctions which are underdamped and shorted by the environment at high frequencies.

AB - We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7 K, the junctions appear non-hysteretic with respect to the switching and retrapping currents IC and IR. A small nonzero resistance is observed even around zero-bias current and scales with temperature as dictated by the phase diffusion mechanism. By varying the graphene carrier concentration we are able to confirm that the observed phase diffusion mechanism follows the trend for an overdamped Josephson junction. This is in contrast with the majority of graphene-based junctions which are underdamped and shorted by the environment at high frequencies.

KW - SUPERCURRENT

KW - CONTACT

KW - VOLTAGE

KW - NOISE

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U2 - 10.1103/PhysRevResearch.4.023203

DO - 10.1103/PhysRevResearch.4.023203

M3 - RGC 21 - Publication in refereed journal

SN - 2643-1564

VL - 4

JO - Physical Review Research

JF - Physical Review Research

IS - 2

M1 - 023203

ER -

Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions

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Research Keywords

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GRF: Valley Current Multiplexer in Bilayer Graphene: A Direct Measurement of Anomalous Velocity

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