TY - JOUR
T1 - Oscillatory Circuits Built on Physical SBT Memristor
AU - Zhang, Yuman
AU - Guo, Mei
AU - Dou, Gang
AU - Li, Yuxia
AU - Chen, Guanrong
PY - 2019/6/30
Y1 - 2019/6/30
N2 - The Sr0.95Ba0.05TiO3 (SBT) nanometer film can be used as a physical memristive component. Three oscillatory circuits built on the physical SBT memristor are proposed in this paper, one is self-excited oscillatory circuit and two are forced oscillatory circuits. These three oscillatory circuits have simple structures with complex dynamics. The self-excited oscillatory circuit can generate steady periodic oscillations; the first forced oscillatory circuit can generate relatively complex quasi-periodic oscillations, while the second can generate more complex dynamics such as chaotic oscillations. The impacts of the circuit parameter and initial state values of the SBT memristor on the dynamical behaviors of the three oscillatory circuits are investigated via numerical simulations. It is found that the SBT memristor can be used to design various memristor-based circuits. Specifically, in a flux-controlled memristor-based circuit, if an inductor is in parallel with the memristor, the order of the circuit is one less than the number of energy storage elements in the circuit. The equilibrium point of the circuit is different from the typical line equilibrium for autonomous circuits. The initial state value of the memristor has no impact on the steady state of the circuit. The same phenomena are observed for a charge-controlled memristor-based circuit, when a capacitor is in series with the memristor.
AB - The Sr0.95Ba0.05TiO3 (SBT) nanometer film can be used as a physical memristive component. Three oscillatory circuits built on the physical SBT memristor are proposed in this paper, one is self-excited oscillatory circuit and two are forced oscillatory circuits. These three oscillatory circuits have simple structures with complex dynamics. The self-excited oscillatory circuit can generate steady periodic oscillations; the first forced oscillatory circuit can generate relatively complex quasi-periodic oscillations, while the second can generate more complex dynamics such as chaotic oscillations. The impacts of the circuit parameter and initial state values of the SBT memristor on the dynamical behaviors of the three oscillatory circuits are investigated via numerical simulations. It is found that the SBT memristor can be used to design various memristor-based circuits. Specifically, in a flux-controlled memristor-based circuit, if an inductor is in parallel with the memristor, the order of the circuit is one less than the number of energy storage elements in the circuit. The equilibrium point of the circuit is different from the typical line equilibrium for autonomous circuits. The initial state value of the memristor has no impact on the steady state of the circuit. The same phenomena are observed for a charge-controlled memristor-based circuit, when a capacitor is in series with the memristor.
KW - Physical SBT memristor
KW - oscillatory circuit
KW - periodic orbit
KW - quasi-periodic orbit
KW - chaos
UR - http://www.scopus.com/inward/record.url?scp=85068971306&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85068971306&origin=recordpage
U2 - 10.1142/S0218127419500974
DO - 10.1142/S0218127419500974
M3 - 21_Publication in refereed journal
VL - 29
JO - International Journal of Bifurcation and Chaos in Applied Sciences and Engineering
JF - International Journal of Bifurcation and Chaos in Applied Sciences and Engineering
SN - 0218-1274
IS - 7
M1 - 1950097
ER -