Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor

H. G. Ong; J. W. Cheah; X. Zou; B. Li; X. H. Cao; H. Tantang; L-J Li; H. Zhang; G. C. Han; J. Wang

doi:10.1088/0022-3727/44/28/285301

Author(s)

H. G. Ong
J. W. Cheah
X. Zou
B. Li
X. H. Cao
H. Tantang
L-J Li
G. C. Han
J. Wang

Detail(s)

Original language	English
Article number	285301
Journal / Publication	Journal of Physics D: Applied Physics
Volume	44
Issue number	28
Online published	24 Jun 2011
Publication status	Published - 20 Jul 2011
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1088/0022-3727/44/28/285301 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-79960240910&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(5e44e2da-bb76-4c06-a18c-67ba3f3227a9).html

Abstract

Using electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube-SiO₂ interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO₂ surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues. © 2011 IOP Publishing Ltd.

Citation Format(s)

[ RIS ] [ BibTeX ]

Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor. / Ong, H. G.; Cheah, J. W.; Zou, X. et al.

In: Journal of Physics D: Applied Physics, Vol. 44, No. 28, 285301, 20.07.2011.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Ong, HG, Cheah, JW, Zou, X, Li, B, Cao, XH, Tantang, H, Li, L-J, Zhang, H, Han, GC & Wang, J 2011, 'Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor', Journal of Physics D: Applied Physics, vol. 44, no. 28, 285301. https://doi.org/10.1088/0022-3727/44/28/285301

Ong, H. G., Cheah, J. W., Zou, X., Li, B., Cao, X. H., Tantang, H., Li, L-J., Zhang, H., Han, G. C., & Wang, J. (2011). Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor. Journal of Physics D: Applied Physics, 44(28), [285301]. https://doi.org/10.1088/0022-3727/44/28/285301

Ong HG, Cheah JW, Zou X, Li B, Cao XH, Tantang H et al. Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor. Journal of Physics D: Applied Physics. 2011 Jul 20;44(28):285301. Epub 2011 Jun 24. doi: 10.1088/0022-3727/44/28/285301