Origin of Hot Carriers in InGaN-Based Quantum-Well Solar Cells

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • K. Y. Lai
  • G. J. Lin
  • C.-Y. Chen
  • Y.-L. Lai
  • J. H. He

Detail(s)

Original languageEnglish
Article number5671457
Pages (from-to)179-181
Journal / PublicationIEEE Electron Device Letters
Volume32
Issue number2
Online published17 Dec 2010
Publication statusPublished - Feb 2011
Externally publishedYes

Abstract

InxGa1-xN/GaN multiple quantum-well (QW) (MQW) solar cells with x = 0.30 and 0.15 were characterized. The MQWs with x = 0.30 show deteriorated performances due to the inferior crystal qualities. At the temperatures above 200 K, the conversion efficiency (η) for x = 0.30 exhibits an abrupt increase led by the thermally activated carriers. Two potential origins are proposed for the hot carriers: 1) the native shallow donors in the MQWs and 2) the shallow QWs due to the compositional fluctuations. According to the distinct behavior of the device with x = 0.15, it is believed that the shallow QWs lead to the abrupt increase in η.

Research Area(s)

  • Electron carriers, gallium compounds, quantum wells (QWs), solar cells

Citation Format(s)

Origin of Hot Carriers in InGaN-Based Quantum-Well Solar Cells. / Lai, K. Y.; Lin, G. J.; Chen, C.-Y. et al.
In: IEEE Electron Device Letters, Vol. 32, No. 2, 5671457, 02.2011, p. 179-181.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review