Origin of Hot Carriers in InGaN-Based Quantum-Well Solar Cells
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 5671457 |
Pages (from-to) | 179-181 |
Journal / Publication | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 2 |
Online published | 17 Dec 2010 |
Publication status | Published - Feb 2011 |
Externally published | Yes |
Link(s)
Abstract
InxGa1-xN/GaN multiple quantum-well (QW) (MQW) solar cells with x = 0.30 and 0.15 were characterized. The MQWs with x = 0.30 show deteriorated performances due to the inferior crystal qualities. At the temperatures above 200 K, the conversion efficiency (η) for x = 0.30 exhibits an abrupt increase led by the thermally activated carriers. Two potential origins are proposed for the hot carriers: 1) the native shallow donors in the MQWs and 2) the shallow QWs due to the compositional fluctuations. According to the distinct behavior of the device with x = 0.15, it is believed that the shallow QWs lead to the abrupt increase in η.
Research Area(s)
- Electron carriers, gallium compounds, quantum wells (QWs), solar cells
Citation Format(s)
Origin of Hot Carriers in InGaN-Based Quantum-Well Solar Cells. / Lai, K. Y.; Lin, G. J.; Chen, C.-Y. et al.
In: IEEE Electron Device Letters, Vol. 32, No. 2, 5671457, 02.2011, p. 179-181.
In: IEEE Electron Device Letters, Vol. 32, No. 2, 5671457, 02.2011, p. 179-181.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review