Origin of flat-band voltage sharp roll-off in metal gate/high-k /ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

X. H. Zheng; A. P. Huang; Z. S. Xiao; Z. C. Yang; M. Wang; X. W. Zhang; W. W. Wang; Paul K. Chu

doi:10.1063/1.3491292

Origin of flat-band voltage sharp roll-off in metal gate/high-k /ultrathin- SiO₂/Si p-channel metal-oxide-semiconductor stacks

X. H. Zheng
, A. P. Huang
, Z. S. Xiao
, Z. C. Yang
, M. Wang
, X. W. Zhang
, W. W. Wang
, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

11 Citations (Scopus)

Abstract

The origin of the flat band voltage roll-off (V_FB roll-off) in metal gate/high- k /ultrathin- SiO₂/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO₂/Si interface on the V_FB sharp roll-off is proposed. The V_FB sharp roll-off appears when the thickness of the SiO ₂ interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the VFB sharp roll-off. © 2010 American Institute of Physics.

Original language	English
Article number	132908
Journal	Applied Physics Letters
Volume	97
Issue number	13
DOIs	https://doi.org/10.1063/1.3491292
Publication status	Published - 27 Sept 2010

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@article{7f1967721c0c42008aa9c6477e620c5d,

title = "Origin of flat-band voltage sharp roll-off in metal gate/high-k /ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks",

abstract = "The origin of the flat band voltage roll-off (VFB roll-off) in metal gate/high- k /ultrathin- SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the VFB sharp roll-off is proposed. The VFB sharp roll-off appears when the thickness of the SiO 2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the VFB sharp roll-off. {\textcopyright} 2010 American Institute of Physics.",

author = "Zheng, \{X. H.\} and Huang, \{A. P.\} and Xiao, \{Z. S.\} and Yang, \{Z. C.\} and M. Wang and Zhang, \{X. W.\} and Wang, \{W. W.\} and Chu, \{Paul K.\}",

year = "2010",

month = sep,

day = "27",

doi = "10.1063/1.3491292",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Origin of flat-band voltage sharp roll-off in metal gate/high-k /ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

AU - Zheng, X. H.

AU - Huang, A. P.

AU - Xiao, Z. S.

AU - Yang, Z. C.

AU - Wang, M.

AU - Zhang, X. W.

AU - Wang, W. W.

AU - Chu, Paul K.

PY - 2010/9/27

Y1 - 2010/9/27

N2 - The origin of the flat band voltage roll-off (VFB roll-off) in metal gate/high- k /ultrathin- SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the VFB sharp roll-off is proposed. The VFB sharp roll-off appears when the thickness of the SiO 2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the VFB sharp roll-off. © 2010 American Institute of Physics.

AB - The origin of the flat band voltage roll-off (VFB roll-off) in metal gate/high- k /ultrathin- SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the VFB sharp roll-off is proposed. The VFB sharp roll-off appears when the thickness of the SiO 2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the VFB sharp roll-off. © 2010 American Institute of Physics.

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U2 - 10.1063/1.3491292

DO - 10.1063/1.3491292

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132908

ER -