Abstract
Bias-assisted reactive ion etching in hydrogen plasma was used for the development of a conical structure of diamond. The diamond cones produced by this method were uniformly distributed over large areas on silicon substrates. Such kinds of structures individual single crystal diamond cones and their arrays provide a crucial breakthrough in the design of high performance mechanical and electronic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 2622-2624 |
| Journal | Applied Physics Letters |
| Volume | 82 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 21 Apr 2003 |
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