Oriented silicon carbide nanowires : Synthesis and field emission properties

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Zhengwei Pan
  • Hau-Ling Lai
  • Frederick C. K. Au
  • Xioafeng Duan
  • Weiya Zhou
  • Wensheng Shi
  • Ning Wang
  • Ning-Biu Wong
  • Shuit-Tong Lee
  • Sishen Xie

Detail(s)

Original languageEnglish
Pages (from-to)1186-1190
Journal / PublicationAdvanced Materials
Volume12
Issue number16
Publication statusPublished - 16 Aug 2000

Abstract

Oriented SiC nanowires were prepared by reacting aligned carbon nanotubes with SiO at 1400 °C for 2 h. The orientation, diameter, and length of the oriented SiC nanowires were similar to those of the original aligned carbon nanotubes, suggesting that the carbon nanotubes acted as a template to confine the reaction. The field emission properties of the well-oriented nanowires were measured. Field emission current densities of 10 μA/cm2 were observed at applied fields of 0.7-1.5 V/μm, and current densities of 10 mA/cm2 were realized at applied fields as low as 2.5-3.5 V/μm. The results represent the lowest field ever reported for any field-emitting materials at technologically-useful current densities.

Citation Format(s)

Oriented silicon carbide nanowires : Synthesis and field emission properties. / Pan, Zhengwei; Lai, Hau-Ling; Au, Frederick C. K. et al.

In: Advanced Materials, Vol. 12, No. 16, 16.08.2000, p. 1186-1190.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review