Oriented diamond growth on silicon (111) using a solid carbon source

Textured diamond films have been grown on silicon (111) substrate by using hot filament chemical vapor deposition. A graphite plate immersed in hydrogen was used as the carbon source rather than the conventional gaseous methane source. During the nucleation period, a negative bias relative to the filaments was applied to the substrate. An epitaxial β-SiC layer was deposited during the bias treatment. Textured diamond film was subsequently grown on the β-SiC layer from the mixture of hydrogen and hydrocarbon species etched from the graphite. © 1998 American Institute of Physics.