Orientation-engineered 2D electronics on van der Waals dielectrics
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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Detail(s)
Original language | English |
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Pages (from-to) | 2236-2249 |
Journal / Publication | Matter |
Volume | 7 |
Issue number | 6 |
Online published | 7 May 2024 |
Publication status | Published - 5 Jun 2024 |
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Abstract
van der Waals (vdWs) dielectrics are widely used in nanoelectronics to preserve the intrinsic properties of two-dimensional (2D) semiconductors. However, achieving aligned growth of 2D semiconductors and their direct utilization on original vdWs epitaxial dielectrics to avoid disorders poses significant challenges. Here, a hydromechanical strategy for aligned epitaxy of 2D materials on naturally occurring vdWs mica dielectrics is developed. By combining density functional theory with Lagrange’s group theorem, a quantitative criterion for 2D material epitaxy on 6-fold symmetric vdWs dielectrics is established. Moreover, the as-grown ultrathin Bi2O2Se-channeled field-effect transistor, with a hybrid dielectric layer, achieves a superior current on/off ratio (1.4 × 107) and high carrier mobility (22.4 cm2 V−1 S−1) by directly integrating as-grown 2D materials/vdWs dielectrics. This work provides a powerful methodological platform for aligned 2D material synthesis, alignment direction prediction, and intrinsic property investigation, laying the foundation for advanced electronics on as-grown 2D materials/vdWs dielectrics.
© 2024 Elsevier Inc. All rights reserved.
© 2024 Elsevier Inc. All rights reserved.
Citation Format(s)
Orientation-engineered 2D electronics on van der Waals dielectrics. / Wang, Weijun; Zhang, Yuxuan; Wang, Wei et al.
In: Matter, Vol. 7, No. 6, 05.06.2024, p. 2236-2249.
In: Matter, Vol. 7, No. 6, 05.06.2024, p. 2236-2249.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review