TY - GEN
T1 - Organic Multi-layer Transistor Constructed by Molecular Self-Assembly of Pyryl Phosphonic Acid
AU - Dong, Jianchun
AU - Parviz, Babak A.
AU - Yip, Hin L.
AU - Ma, Hong
AU - Jen, Alex K-Y.
PY - 2005/7
Y1 - 2005/7
N2 - We present a simple method to construct a multi-layer transistor by exploiting self-assembly of pyryl phosphonic acid (PYPA) molecules between a set of interdigitated metal electrodes on a silicon dioxide surface. The self-assembly method used for the construction of the device makes it compatible for integration with Complementary Metal Oxide Semiconductor (CMOS) circuits. Using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), we have established that PYPA molecules form either a dense 0.9 nm thin monolayer or a polycrystalline multilayer on SiO2 surface with the specific step height of 2.5 nm. By studying the gating effect of the transistors, we measured the carrier mobility in PYPA as a function of the applied electric field. Using these results, we have proposed a conduction model in the PYPA self-assembled device. ©2005 IEEE.
AB - We present a simple method to construct a multi-layer transistor by exploiting self-assembly of pyryl phosphonic acid (PYPA) molecules between a set of interdigitated metal electrodes on a silicon dioxide surface. The self-assembly method used for the construction of the device makes it compatible for integration with Complementary Metal Oxide Semiconductor (CMOS) circuits. Using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), we have established that PYPA molecules form either a dense 0.9 nm thin monolayer or a polycrystalline multilayer on SiO2 surface with the specific step height of 2.5 nm. By studying the gating effect of the transistors, we measured the carrier mobility in PYPA as a function of the applied electric field. Using these results, we have proposed a conduction model in the PYPA self-assembled device. ©2005 IEEE.
KW - Molecular electronics
KW - Self-assembled monolayer
KW - Self-assembly
KW - Thin-film transistor
UR - https://www.scopus.com/pages/publications/33746864115
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-33746864115&origin=recordpage
U2 - 10.1109/NANO.2005.1500813
DO - 10.1109/NANO.2005.1500813
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 0780391993
VL - 2
T3 - IEEE Conference on Nanotechnology
SP - 511
EP - 514
BT - Proceedings of 2005 5th IEEE Conference on Nanotechnology
PB - IEEE
T2 - 5th IEEE Conference on Nanotechnology, IEEE-NANO 2005
Y2 - 11 July 2005 through 15 July 2005
ER -