Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Zhan Hua Li
  • Jia Xing He
  • Xiao Hu Lv
  • Ling Fei Chi
  • Ming-De Li
  • Tooru Tanaka
  • Qi Xin Guo
  • Chao Ping Liu

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Detail(s)

Original languageEnglish
Article number6346
Journal / PublicationNature Communications
Volume13
Online published26 Oct 2022
Publication statusPublished - 2022

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Abstract

As a promising high mobility p-type wide bandgap semiconductor, copper iodide has received increasing attention in recent years. However, the defect physics/evolution are still controversial, and particularly the ultrafast carrier and exciton dynamics in copper iodide has rarely been investigated. Here, we study these fundamental properties for copper iodide thin films by a synergistic approach employing a combination of analytical techniques. Steady-state photoluminescence spectra reveal that the emission at ~420 nm arises from the recombination of electrons with neutral copper vacancies. The photogenerated carrier density dependent ultrafast physical processes are elucidated with using the femtosecond transient absorption spectroscopy. Both the effects of hot-phonon bottleneck and the Auger heating significantly slow down the cooling rate of hot-carriers in the case of high excitation density. The effect of defects on the carrier recombination and the two-photon induced ultrafast carrier dynamics are also investigated. These findings are crucial to the optoelectronic applications of copper iodide.

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Citation Format(s)

Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films. / Li, Zhan Hua; He, Jia Xing; Lv, Xiao Hu et al.
In: Nature Communications, Vol. 13, 6346, 2022.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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