Optimized lift-off technique for deposition of high-quality Ti strip on LiNbO3 crystal

De-Long Zhang; W. H. Wong; E. Y B Pun

doi:10.1116/1.1637913

Optimized lift-off technique for deposition of high-quality Ti strip on LiNbO₃ crystal

De-Long Zhang
, W. H. Wong
, E. Y B Pun

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Abstract

A lift-off technique for deposition of Ti strips onto the surface of both Z-and X-cut LiNbO₃ crystals was studied. Several pretreatments on the Ti-sputtered substrate were compared before carrying out the lift-off procedure to optimize the procedure. Preserving the Ti-sputtered substrate in a container at a temperature of 50-90 °C for a duration of several hours was found to be the best pretreatment. The pretreatment was found to strengthen the adhesion of the Ti metal onto the crystal surface to some extent and thereby allowed the obtaining of high quality Ti strips.

Original language	English
Pages (from-to)	283-285
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	1
DOIs	https://doi.org/10.1116/1.1637913
Publication status	Published - Jan 2004

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abstract = "A lift-off technique for deposition of Ti strips onto the surface of both Z-and X-cut LiNbO3 crystals was studied. Several pretreatments on the Ti-sputtered substrate were compared before carrying out the lift-off procedure to optimize the procedure. Preserving the Ti-sputtered substrate in a container at a temperature of 50-90 °C for a duration of several hours was found to be the best pretreatment. The pretreatment was found to strengthen the adhesion of the Ti metal onto the crystal surface to some extent and thereby allowed the obtaining of high quality Ti strips.",

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N2 - A lift-off technique for deposition of Ti strips onto the surface of both Z-and X-cut LiNbO3 crystals was studied. Several pretreatments on the Ti-sputtered substrate were compared before carrying out the lift-off procedure to optimize the procedure. Preserving the Ti-sputtered substrate in a container at a temperature of 50-90 °C for a duration of several hours was found to be the best pretreatment. The pretreatment was found to strengthen the adhesion of the Ti metal onto the crystal surface to some extent and thereby allowed the obtaining of high quality Ti strips.

AB - A lift-off technique for deposition of Ti strips onto the surface of both Z-and X-cut LiNbO3 crystals was studied. Several pretreatments on the Ti-sputtered substrate were compared before carrying out the lift-off procedure to optimize the procedure. Preserving the Ti-sputtered substrate in a container at a temperature of 50-90 °C for a duration of several hours was found to be the best pretreatment. The pretreatment was found to strengthen the adhesion of the Ti metal onto the crystal surface to some extent and thereby allowed the obtaining of high quality Ti strips.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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