Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices With Simplified Structures
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
Original language | English |
---|---|
Pages (from-to) | 1992-1995 |
Journal / Publication | IEEE Transactions on Electron Devices |
Volume | 68 |
Issue number | 4 |
Online published | 26 Feb 2021 |
Publication status | Published - Apr 2021 |
Link(s)
Abstract
We report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric α -In2Se3. We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW material-based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using α -In2Se3 memory devices, we also demonstrate the universal or and and optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW material-based optoelectronic memories for dense device integration and next-generation computation.
Research Area(s)
- In-memory computing, optoelectronic memories, van der Waals (vdW) ferroelectrics.
Citation Format(s)
Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices With Simplified Structures. / Xue, Fei; He, Xin; Periyanagounder, Dharmaraj et al.
In: IEEE Transactions on Electron Devices, Vol. 68, No. 4, 04.2021, p. 1992-1995.
In: IEEE Transactions on Electron Devices, Vol. 68, No. 4, 04.2021, p. 1992-1995.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review