Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices With Simplified Structures

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

2 Scopus Citations
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Author(s)

  • Fei Xue
  • Xin He
  • Dharmaraj Periyanagounder
  • Zhigang Ji
  • Lain-Jong Li
  • Xixiang Zhang

Detail(s)

Original languageEnglish
Pages (from-to)1992-1995
Journal / PublicationIEEE Transactions on Electron Devices
Volume68
Issue number4
Online published26 Feb 2021
Publication statusPublished - Apr 2021

Abstract

We report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric α -In2Se3. We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW material-based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using α -In2Se3 memory devices, we also demonstrate the universal or and and optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW material-based optoelectronic memories for dense device integration and next-generation computation.

Research Area(s)

  • In-memory computing, optoelectronic memories, van der Waals (vdW) ferroelectrics.

Citation Format(s)

Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices With Simplified Structures. / Xue, Fei; He, Xin; Periyanagounder, Dharmaraj; Ji, Zhigang; Li, Lain-Jong; He, Jr-Hau; Zhang, Xixiang.

In: IEEE Transactions on Electron Devices, Vol. 68, No. 4, 04.2021, p. 1992-1995.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review