TY - JOUR
T1 - Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices With Simplified Structures
AU - Xue, Fei
AU - He, Xin
AU - Periyanagounder, Dharmaraj
AU - Ji, Zhigang
AU - Li, Lain-Jong
AU - He, Jr-Hau
AU - Zhang, Xixiang
PY - 2021/4
Y1 - 2021/4
N2 - We report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric α -In2Se3. We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW material-based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using α -In2Se3 memory devices, we also demonstrate the universal or and and optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW material-based optoelectronic memories for dense device integration and next-generation computation.
AB - We report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric α -In2Se3. We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW material-based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using α -In2Se3 memory devices, we also demonstrate the universal or and and optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW material-based optoelectronic memories for dense device integration and next-generation computation.
KW - In-memory computing
KW - optoelectronic memories
KW - van der Waals (vdW) ferroelectrics.
UR - http://www.scopus.com/inward/record.url?scp=85101796762&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85101796762&origin=recordpage
U2 - 10.1109/TED.2021.3059976
DO - 10.1109/TED.2021.3059976
M3 - RGC 21 - Publication in refereed journal
SN - 0018-9383
VL - 68
SP - 1992
EP - 1995
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 4
ER -