Optical switching of GeTe phase change materials for high-frequency applications

Aurelian Crunteanu; Laure Huitema; Jean-Christophe Orlianges; Cyril Guines; Damien Passerieux; Hang Wong

doi:10.1109/IMWS-AMP.2017.8247379

Optical switching of GeTe phase change materials for high-frequency applications

Aurelian Crunteanu^*, Laure Huitema, Jean-Christophe Orlianges, Cyril Guines, Damien Passerieux, Hang Wong

^*Corresponding author for this work

State Key Laboratory of Terahertz and Millimeter Waves (City University of Hong Kong)

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

16 Citations (Scopus)

Abstract

We present the optical switching of the GeTe phase change material between its insulated and conductive states using short (∼ 30 ns) single UV laser pulses. The material was integrated in high-frequency switches which can be optically toggled between their ON and OFF-states in a bi-stable manner on large frequency bands, up to 67 GHz.

Original language	English
Title of host publication	2017 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
Publisher	IEEE
ISBN (Electronic)	9781538604809
ISBN (Print)	9781538604816
DOIs	https://doi.org/10.1109/IMWS-AMP.2017.8247379
Publication status	Published - Sept 2017
Event	2017 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes (IMWS-AMP 2017) - Pavia, Italy Duration: 20 Sept 2017 → 22 Sept 2017 https://imws-ieee.org/past_conference/index.html

Conference

Conference	2017 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes (IMWS-AMP 2017)
Abbreviated title	IMWS-AMP 2017
Place	Italy
City	Pavia
Period	20/09/17 → 22/09/17
Internet address	https://imws-ieee.org/past_conference/index.html

Research Keywords

GeTe
optical control
phase change materials
RF-switches

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10.1109/IMWS-AMP.2017.8247379

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title = "Optical switching of GeTe phase change materials for high-frequency applications",

abstract = "We present the optical switching of the GeTe phase change material between its insulated and conductive states using short (∼ 30 ns) single UV laser pulses. The material was integrated in high-frequency switches which can be optically toggled between their ON and OFF-states in a bi-stable manner on large frequency bands, up to 67 GHz.",

keywords = "GeTe, optical control, phase change materials, RF-switches",

author = "Aurelian Crunteanu and Laure Huitema and Jean-Christophe Orlianges and Cyril Guines and Damien Passerieux and Hang Wong",

year = "2017",

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Crunteanu, A, Huitema, L, Orlianges, J-C, Guines, C, Passerieux, D & Wong, H 2017, Optical switching of GeTe phase change materials for high-frequency applications. in 2017 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP). IEEE, 2017 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes (IMWS-AMP 2017), Pavia, Italy, 20/09/17. https://doi.org/10.1109/IMWS-AMP.2017.8247379

Optical switching of GeTe phase change materials for high-frequency applications. / Crunteanu, Aurelian; Huitema, Laure; Orlianges, Jean-Christophe et al.
2017 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP). IEEE, 2017.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Optical switching of GeTe phase change materials for high-frequency applications

AU - Crunteanu, Aurelian

AU - Huitema, Laure

AU - Orlianges, Jean-Christophe

AU - Guines, Cyril

AU - Passerieux, Damien

AU - Wong, Hang

PY - 2017/9

Y1 - 2017/9

N2 - We present the optical switching of the GeTe phase change material between its insulated and conductive states using short (∼ 30 ns) single UV laser pulses. The material was integrated in high-frequency switches which can be optically toggled between their ON and OFF-states in a bi-stable manner on large frequency bands, up to 67 GHz.

AB - We present the optical switching of the GeTe phase change material between its insulated and conductive states using short (∼ 30 ns) single UV laser pulses. The material was integrated in high-frequency switches which can be optically toggled between their ON and OFF-states in a bi-stable manner on large frequency bands, up to 67 GHz.

KW - GeTe

KW - optical control

KW - phase change materials

KW - RF-switches

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DO - 10.1109/IMWS-AMP.2017.8247379

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781538604816

BT - 2017 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

PB - IEEE

T2 - 2017 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes (IMWS-AMP 2017)

Y2 - 20 September 2017 through 22 September 2017

ER -

Optical switching of GeTe phase change materials for high-frequency applications

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