Abstract
We have synthesized GaN1-xAsx alloys using implantation of As into GaN followed by rapid thermal annealing. Appearance of a new As-derived band at about 2.5 eV below the conduction band edge is confirmed by photomodulated transmission (PT) and photoluminescence (PL). Photoluminescence peaks at about 2.37 eV observed at low temperature in As and Ar implanted Mg doped GaN samples are attributed to emission associated with complexes of damage produced donors and Mg acceptors. The results demonstrate a feasibility of using ion beam synthesis to produce N-rich group III nitride based highly mismatched alloys. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Original language | English |
|---|---|
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 6 |
| Issue number | SUPPL. 2 |
| DOIs | |
| Publication status | Published - Jul 2009 |
| Externally published | Yes |
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