Optical properties investigations of organic Alq3 layers doped by DCM

J. Jakabovič; T. C. Wong; O. Lengyel; J. Kováč; C. S. Lee; S. T. Lee

doi:10.1109/ASDAM.2002.1088468

Optical properties investigations of organic Alq₃ layers doped by DCM

J. Jakabovič
, T. C. Wong
, O. Lengyel
, J. Kováč
, C. S. Lee
, S. T. Lee

Centre of Super-Diamond and Advanced Films

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

2 Citations (Scopus)

Abstract

We present the study of optical emission properties carried out on Alq₃ organic solutions and evaporated films prepared by doping with dye molecules of DCM. The maxima of spontaneous emission spectral characteristics of Alq₃:DCM films measured by photo- and electroluminescence shifts towards the higher wavelengths from 608 - 660 nm with simultaneous decrease in spectral intensities within the investigated DCM doping concentration range of 0.9 11%, respectively. The maximum emission intensity was observed at DCM doping concentration around 1% causing peak emission near 628 nm by optical pumping. Optically excited amplified spontaneous emission and laser spectrum showing evenly spaced resonant cavity modes with preferential emission peak at 621.4 nm have been measured on waveguide structures prepared onto GaAs substrate.

Original language	English
Title of host publication	ASDAM 2002 - Conference Proceedings, 4th International Conference on Advanced Semiconductor Devices and Microsystems
Publisher	IEEE
Pages	35-38
ISBN (Print)	078037276, 9780780372764
DOIs	https://doi.org/10.1109/ASDAM.2002.1088468
Publication status	Published - 2002
Event	4th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2002 - Smolenice, Slovakia Duration: 14 Oct 2002 → 16 Oct 2002

Conference

Conference	4th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2002
Place	Slovakia
City	Smolenice
Period	14/10/02 → 16/10/02

Access Output

10.1109/ASDAM.2002.1088468

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@inproceedings{d20ac92ebbc54a6da9effe4eaaac9939,

title = "Optical properties investigations of organic Alq3 layers doped by DCM",

abstract = "We present the study of optical emission properties carried out on Alq3 organic solutions and evaporated films prepared by doping with dye molecules of DCM. The maxima of spontaneous emission spectral characteristics of Alq3:DCM films measured by photo- and electroluminescence shifts towards the higher wavelengths from 608 - 660 nm with simultaneous decrease in spectral intensities within the investigated DCM doping concentration range of 0.9 11\%, respectively. The maximum emission intensity was observed at DCM doping concentration around 1\% causing peak emission near 628 nm by optical pumping. Optically excited amplified spontaneous emission and laser spectrum showing evenly spaced resonant cavity modes with preferential emission peak at 621.4 nm have been measured on waveguide structures prepared onto GaAs substrate.",

author = "J. Jakabovi{\v c} and Wong, \{T. C.\} and O. Lengyel and J. Kov{\'a}{\v c} and Lee, \{C. S.\} and Lee, \{S. T.\}",

year = "2002",

doi = "10.1109/ASDAM.2002.1088468",

language = "English",

isbn = "078037276",

pages = "35--38",

booktitle = "ASDAM 2002 - Conference Proceedings, 4th International Conference on Advanced Semiconductor Devices and Microsystems",

publisher = "IEEE",

address = "United States",

note = "4th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2002 ; Conference date: 14-10-2002 Through 16-10-2002",

}

Jakabovič, J, Wong, TC, Lengyel, O, Kováč, J, Lee, CS & Lee, ST 2002, Optical properties investigations of organic Alq₃ layers doped by DCM. in ASDAM 2002 - Conference Proceedings, 4th International Conference on Advanced Semiconductor Devices and Microsystems., 1088468, IEEE, pp. 35-38, 4th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2002, Smolenice, Slovakia, 14/10/02. https://doi.org/10.1109/ASDAM.2002.1088468

Optical properties investigations of organic Alq₃ layers doped by DCM. / Jakabovič, J.; Wong, T. C.; Lengyel, O. et al.
ASDAM 2002 - Conference Proceedings, 4th International Conference on Advanced Semiconductor Devices and Microsystems. IEEE, 2002. p. 35-38 1088468.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Optical properties investigations of organic Alq3 layers doped by DCM

AU - Jakabovič, J.

AU - Wong, T. C.

AU - Lengyel, O.

AU - Kováč, J.

AU - Lee, C. S.

AU - Lee, S. T.

PY - 2002

Y1 - 2002

N2 - We present the study of optical emission properties carried out on Alq3 organic solutions and evaporated films prepared by doping with dye molecules of DCM. The maxima of spontaneous emission spectral characteristics of Alq3:DCM films measured by photo- and electroluminescence shifts towards the higher wavelengths from 608 - 660 nm with simultaneous decrease in spectral intensities within the investigated DCM doping concentration range of 0.9 11%, respectively. The maximum emission intensity was observed at DCM doping concentration around 1% causing peak emission near 628 nm by optical pumping. Optically excited amplified spontaneous emission and laser spectrum showing evenly spaced resonant cavity modes with preferential emission peak at 621.4 nm have been measured on waveguide structures prepared onto GaAs substrate.

AB - We present the study of optical emission properties carried out on Alq3 organic solutions and evaporated films prepared by doping with dye molecules of DCM. The maxima of spontaneous emission spectral characteristics of Alq3:DCM films measured by photo- and electroluminescence shifts towards the higher wavelengths from 608 - 660 nm with simultaneous decrease in spectral intensities within the investigated DCM doping concentration range of 0.9 11%, respectively. The maximum emission intensity was observed at DCM doping concentration around 1% causing peak emission near 628 nm by optical pumping. Optically excited amplified spontaneous emission and laser spectrum showing evenly spaced resonant cavity modes with preferential emission peak at 621.4 nm have been measured on waveguide structures prepared onto GaAs substrate.

UR - https://www.scopus.com/pages/publications/84964197748

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84964197748&origin=recordpage

U2 - 10.1109/ASDAM.2002.1088468

DO - 10.1109/ASDAM.2002.1088468

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 078037276

SN - 9780780372764

SP - 35

EP - 38

BT - ASDAM 2002 - Conference Proceedings, 4th International Conference on Advanced Semiconductor Devices and Microsystems

PB - IEEE

T2 - 4th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2002

Y2 - 14 October 2002 through 16 October 2002

ER -