Optical properties and electronic structure of InN and In-rich group III-nitride alloys

W. Walukiewicz; S. X. Li; J. Wu; K. M. Yu; J. W. Ager III; E. E. Haller; Hai Lu; William J. Schaff

doi:10.1016/j.jcrysgro.2004.05.041

Author(s)

W. Walukiewicz
S. X. Li
J. Wu
J. W. Ager III
E. E. Haller
Hai Lu
William J. Schaff

Detail(s)

Original language	English
Pages (from-to)	119-127
Journal / Publication	Journal of Crystal Growth
Volume	269
Issue number	1
Publication status	Published - 15 Aug 2004
Externally published	Yes

Conference

Title	Proceedings of the First ONR International Indium Nitride Work
Place	Australia
City	Fremantle
Period	16 - 20 November 2003

Link(s)

DOI	DOI https://doi.org/10.1016/j.jcrysgro.2004.05.041 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-3342900182&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(0aadec8e-47c2-4ea7-94c6-cb8ad792de23).html

Abstract

The optical properties and electronic structure of molecular-beam epitaxy grown InN and In-rich group III-nitride alloy films are studied. The band gap of InN is determined to be 0.7eV by optical absorption, photoluminescence, and photo-modulated reflectance. The band gap exhibits weaker temperature and pressure dependencies than those of GaN and AlN. The narrow band gap leads to a strong k·p interaction, resulting in a non-parabolic conduction band, which is studied by the free electron concentration dependence of the electron effective mass. Highly n-type InN exhibits a large Burstein-Moss shift in the optical absorption edge; this effect may be responsible for the 1.9eV band gap reported previously for some degenerately doped InN films. The band gap bowing parameters of the InGaN and InAlN alloy systems are determined. The band offset of InN with other group III-nitrides is presented and its effect on p-type doping is discussed. © 2004 Elsevier B.V. All rights reserved.

Research Area(s)

A1. Electronic structures, A1. Optical properties, B2. Semiconducting group III-nitrides

Citation Format(s)

[ RIS ] [ BibTeX ]

Optical properties and electronic structure of InN and In-rich group III-nitride alloys. / Walukiewicz, W.; Li, S. X.; Wu, J. et al.
In: Journal of Crystal Growth, Vol. 269, No. 1, 15.08.2004, p. 119-127.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Walukiewicz, W, Li, SX, Wu, J, Yu, KM, Ager III, JW, Haller, EE, Lu, H & Schaff, WJ 2004, 'Optical properties and electronic structure of InN and In-rich group III-nitride alloys', Journal of Crystal Growth, vol. 269, no. 1, pp. 119-127. https://doi.org/10.1016/j.jcrysgro.2004.05.041

Walukiewicz, W., Li, S. X., Wu, J., Yu, K. M., Ager III, J. W., Haller, E. E., Lu, H., & Schaff, W. J. (2004). Optical properties and electronic structure of InN and In-rich group III-nitride alloys. Journal of Crystal Growth, 269(1), 119-127. https://doi.org/10.1016/j.jcrysgro.2004.05.041

Walukiewicz W, Li SX, Wu J, Yu KM, Ager III JW, Haller EE et al. Optical properties and electronic structure of InN and In-rich group III-nitride alloys. Journal of Crystal Growth. 2004 Aug 15;269(1):119-127. doi: 10.1016/j.jcrysgro.2004.05.041

Walukiewicz, W. ; Li, S. X. ; Wu, J. et al. / Optical properties and electronic structure of InN and In-rich group III-nitride alloys. In: Journal of Crystal Growth. 2004 ; Vol. 269, No. 1. pp. 119-127.