Optical properties and electronic structure of InN and In-rich group III-nitride alloys

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

162 Scopus Citations
View graph of relations

Author(s)

  • W. Walukiewicz
  • S. X. Li
  • J. Wu
  • J. W. Ager III
  • E. E. Haller
  • Hai Lu
  • William J. Schaff

Detail(s)

Original languageEnglish
Pages (from-to)119-127
Journal / PublicationJournal of Crystal Growth
Volume269
Issue number1
Publication statusPublished - 15 Aug 2004
Externally publishedYes

Conference

TitleProceedings of the First ONR International Indium Nitride Work
PlaceAustralia
CityFremantle
Period16 - 20 November 2003

Abstract

The optical properties and electronic structure of molecular-beam epitaxy grown InN and In-rich group III-nitride alloy films are studied. The band gap of InN is determined to be 0.7eV by optical absorption, photoluminescence, and photo-modulated reflectance. The band gap exhibits weaker temperature and pressure dependencies than those of GaN and AlN. The narrow band gap leads to a strong k·p interaction, resulting in a non-parabolic conduction band, which is studied by the free electron concentration dependence of the electron effective mass. Highly n-type InN exhibits a large Burstein-Moss shift in the optical absorption edge; this effect may be responsible for the 1.9eV band gap reported previously for some degenerately doped InN films. The band gap bowing parameters of the InGaN and InAlN alloy systems are determined. The band offset of InN with other group III-nitrides is presented and its effect on p-type doping is discussed. © 2004 Elsevier B.V. All rights reserved.

Research Area(s)

  • A1. Electronic structures, A1. Optical properties, B2. Semiconducting group III-nitrides

Citation Format(s)

Optical properties and electronic structure of InN and In-rich group III-nitride alloys. / Walukiewicz, W.; Li, S. X.; Wu, J.; Yu, K. M.; Ager III, J. W.; Haller, E. E.; Lu, Hai; Schaff, William J.

In: Journal of Crystal Growth, Vol. 269, No. 1, 15.08.2004, p. 119-127.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review