Optical emission from silicon-based SiO2 islands fabricated by anodic alumina templates

G. S. Huang; X. L. Wu; Y. F. Mei; P. Chen; Paul K. Chu

doi:10.1063/1.1767980

Optical emission from silicon-based SiO₂ islands fabricated by anodic alumina templates

G. S. Huang, X. L. Wu, Y. F. Mei, P. Chen, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

5 Citations (Scopus)

Abstract

The photoluminescence spectra of silicon-based nanoscale SiO₂ islands obtained by anodization of silicon based aluminum membranes was discussed. The anodization of silicon-based aluminum membranes was takes place in a 0.3m sulfuric acid solution under a constant voltage of 25 V. It was suggested that the 290 nm band originates from optical transition in the E′ centers in the SiO₂ island. The results show a clear understanding of the light-emitting mechanism of silicon-based SiO₂ island array.

Original language	English
Pages (from-to)	1443-1446
Journal	Journal of Applied Physics
Volume	96
Issue number	3
DOIs	https://doi.org/10.1063/1.1767980
Publication status	Published - 1 Aug 2004

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title = "Optical emission from silicon-based SiO2 islands fabricated by anodic alumina templates",

abstract = "The photoluminescence spectra of silicon-based nanoscale SiO2 islands obtained by anodization of silicon based aluminum membranes was discussed. The anodization of silicon-based aluminum membranes was takes place in a 0.3m sulfuric acid solution under a constant voltage of 25 V. It was suggested that the 290 nm band originates from optical transition in the E′ centers in the SiO2 island. The results show a clear understanding of the light-emitting mechanism of silicon-based SiO2 island array.",

author = "Huang, {G. S.} and Wu, {X. L.} and Mei, {Y. F.} and P. Chen and Chu, {Paul K.}",

year = "2004",

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T1 - Optical emission from silicon-based SiO2 islands fabricated by anodic alumina templates

AU - Huang, G. S.

AU - Wu, X. L.

AU - Mei, Y. F.

AU - Chen, P.

AU - Chu, Paul K.

PY - 2004/8/1

Y1 - 2004/8/1

N2 - The photoluminescence spectra of silicon-based nanoscale SiO2 islands obtained by anodization of silicon based aluminum membranes was discussed. The anodization of silicon-based aluminum membranes was takes place in a 0.3m sulfuric acid solution under a constant voltage of 25 V. It was suggested that the 290 nm band originates from optical transition in the E′ centers in the SiO2 island. The results show a clear understanding of the light-emitting mechanism of silicon-based SiO2 island array.

AB - The photoluminescence spectra of silicon-based nanoscale SiO2 islands obtained by anodization of silicon based aluminum membranes was discussed. The anodization of silicon-based aluminum membranes was takes place in a 0.3m sulfuric acid solution under a constant voltage of 25 V. It was suggested that the 290 nm band originates from optical transition in the E′ centers in the SiO2 island. The results show a clear understanding of the light-emitting mechanism of silicon-based SiO2 island array.

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U2 - 10.1063/1.1767980

DO - 10.1063/1.1767980

M3 - RGC 21 - Publication in refereed journal

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SP - 1443

EP - 1446

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -