Optical and Optoelectronic Properties of Black Phosphorus and Recent Photonic and Optoelectronic Applications

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

Detail(s)

Original languageEnglish
Article number1900165
Journal / PublicationSmall Methods
Volume3
Issue number10
Online published9 May 2019
Publication statusPublished - 16 Oct 2019

Abstract

The rapid development of the semiconductor industry calls for the exploration of novel semiconductors to cater to modern technical and commercial needs. Recently, black phosphorus (BP) has emerged as a new class of 2D semiconducting material and has attracted intensive research attention. The high carrier mobility and tunable direct bandgap of BP deliver great promise in photonic and optoelectronic device applications. Furthermore, the unique intrinsic anisotropy arising from the puckered structure can be exploited in the design of new devices. This review briefly introduces the history of BP and puts emphasis on recent advances pertaining to its optical properties and applications in the photonic and optoelectronic fields. From the perspective of mass production and practical use of BP, some of the research challenges and opportunities are discussed.

Research Area(s)

  • black phosphorus, in-plane anisotropy, optoelectronics, photonics, 2D materials, FIELD-EFFECT TRANSISTORS, TRANSITION-METAL DICHALCOGENIDES, IN-SITU GROWTH, LIQUID-EXFOLIATION, 3RD-HARMONIC GENERATION, SATURABLE ABSORBER, HIGHLY EFFICIENT, PHOTODETECTOR, MODULATION, MONOLAYER