Optical and electrical properties of ZnO: Al thin films synthesized by low-pressure pulsed laser deposition

X. Q. Gu; L. P. Zhu; L. Cao; Z. Z. Ye; H. P. He; Paul K. Chu

doi:10.1016/j.mssp.2011.01.003

Optical and electrical properties of ZnO: Al thin films synthesized by low-pressure pulsed laser deposition

X. Q. Gu
, L. P. Zhu
, L. Cao
, Z. Z. Ye
, H. P. He
, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

52 Citations (Scopus)

Abstract

ZnO:Al thin films were prepared at a low oxygen pressure between 0.02 and 0.1 Pa by pulsed laser deposition (PLD). The structure as well as their optical and electrical properties was investigated by X-ray diffraction, optical transmittance spectroscopy, and Hall measurements. The ZnO:Al films possess resistivity of the order of 10^-4 Ω cm and the optical transmittance exceeds 80% in the visible range. The highest electron concentration (1.18×10²¹ cm^-3) is achieved at a deposition pressure of 0.02 Pa and it decreases slightly with increasing oxygen pressure. The band gap is found to depend on the electron concentration. © 2010 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	48-51
Journal	Materials Science in Semiconductor Processing
Volume	14
Issue number	1
DOIs	https://doi.org/10.1016/j.mssp.2011.01.003
Publication status	Published - Mar 2011

Research Keywords

Conductivity
Optical properties
Thin films
ZnO

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10.1016/j.mssp.2011.01.003

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title = "Optical and electrical properties of ZnO: Al thin films synthesized by low-pressure pulsed laser deposition",

abstract = "ZnO:Al thin films were prepared at a low oxygen pressure between 0.02 and 0.1 Pa by pulsed laser deposition (PLD). The structure as well as their optical and electrical properties was investigated by X-ray diffraction, optical transmittance spectroscopy, and Hall measurements. The ZnO:Al films possess resistivity of the order of 10-4 Ω cm and the optical transmittance exceeds 80\% in the visible range. The highest electron concentration (1.18×1021 cm-3) is achieved at a deposition pressure of 0.02 Pa and it decreases slightly with increasing oxygen pressure. The band gap is found to depend on the electron concentration. {\textcopyright} 2010 Elsevier Ltd. All rights reserved.",

keywords = "Conductivity, Optical properties, Thin films, ZnO",

author = "Gu, \{X. Q.\} and Zhu, \{L. P.\} and L. Cao and Ye, \{Z. Z.\} and He, \{H. P.\} and Chu, \{Paul K.\}",

year = "2011",

month = mar,

doi = "10.1016/j.mssp.2011.01.003",

language = "English",

volume = "14",

pages = "48--51",

journal = "Materials Science in Semiconductor Processing",

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TY - JOUR

T1 - Optical and electrical properties of ZnO

T2 - Al thin films synthesized by low-pressure pulsed laser deposition

AU - Gu, X. Q.

AU - Zhu, L. P.

AU - Cao, L.

AU - Ye, Z. Z.

AU - He, H. P.

AU - Chu, Paul K.

PY - 2011/3

Y1 - 2011/3

N2 - ZnO:Al thin films were prepared at a low oxygen pressure between 0.02 and 0.1 Pa by pulsed laser deposition (PLD). The structure as well as their optical and electrical properties was investigated by X-ray diffraction, optical transmittance spectroscopy, and Hall measurements. The ZnO:Al films possess resistivity of the order of 10-4 Ω cm and the optical transmittance exceeds 80% in the visible range. The highest electron concentration (1.18×1021 cm-3) is achieved at a deposition pressure of 0.02 Pa and it decreases slightly with increasing oxygen pressure. The band gap is found to depend on the electron concentration. © 2010 Elsevier Ltd. All rights reserved.

AB - ZnO:Al thin films were prepared at a low oxygen pressure between 0.02 and 0.1 Pa by pulsed laser deposition (PLD). The structure as well as their optical and electrical properties was investigated by X-ray diffraction, optical transmittance spectroscopy, and Hall measurements. The ZnO:Al films possess resistivity of the order of 10-4 Ω cm and the optical transmittance exceeds 80% in the visible range. The highest electron concentration (1.18×1021 cm-3) is achieved at a deposition pressure of 0.02 Pa and it decreases slightly with increasing oxygen pressure. The band gap is found to depend on the electron concentration. © 2010 Elsevier Ltd. All rights reserved.

KW - Conductivity

KW - Optical properties

KW - Thin films

KW - ZnO

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-79952619798&origin=recordpage

U2 - 10.1016/j.mssp.2011.01.003

DO - 10.1016/j.mssp.2011.01.003

M3 - RGC 21 - Publication in refereed journal

SN - 1369-8001

VL - 14

SP - 48

EP - 51

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1

ER -

Optical and electrical properties of ZnO: Al thin films synthesized by low-pressure pulsed laser deposition

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