Operational phase-space of separation by plasma implantation of oxygen (SPIMOX)

S. Sundar Kumar Iyer; Xiang Lu; Jingbao Liu; Barry Linder; Chenming Hu; Nathan W. Cheung; Jing Min; Zhineng Fan; Paul Chu

Operational phase-space of separation by plasma implantation of oxygen (SPIMOX)

S. Sundar Kumar Iyer, Xiang Lu, Jingbao Liu, Barry Linder, Chenming Hu, Nathan W. Cheung, Jing Min, Zhineng Fan, Paul Chu

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

SPIMOX using plasma immersion ion implantation (PIII) has been proposed as a cost-effective method for fabricating silicon on insulator (SOI) wafers. PIII, compared to conventional implanters, allows for simpler and low maintenance-cost implanters. High throughput, independent of the wafer size can be achieved by the SPIMOX process. A phase-space of implantation time and implantation pressure is developed to determine the operational regions for SPIMOX implantation. SPIMOX process using high fractional ionization plasma for implantation is found to be particularly suited for thin SOI fabrication required for future low-power IC applications.

Original language	English
Title of host publication	Proceedings of the International Conference on Ion Implantation Technology
Publisher	IEEE
Pages	764-767
Publication status	Published - 1996
Event	Proceedings of the 1996 11th International Conference on Ion Implantation Technology - Austin, TX, USA Duration: 16 Jun 1996 → 21 Jun 1996

Conference

Conference	Proceedings of the 1996 11th International Conference on Ion Implantation Technology
City	Austin, TX, USA
Period	16/06/96 → 21/06/96

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@inproceedings{69205e60cba740d4ba0679bb9324eb5e,

title = "Operational phase-space of separation by plasma implantation of oxygen (SPIMOX)",

abstract = "SPIMOX using plasma immersion ion implantation (PIII) has been proposed as a cost-effective method for fabricating silicon on insulator (SOI) wafers. PIII, compared to conventional implanters, allows for simpler and low maintenance-cost implanters. High throughput, independent of the wafer size can be achieved by the SPIMOX process. A phase-space of implantation time and implantation pressure is developed to determine the operational regions for SPIMOX implantation. SPIMOX process using high fractional ionization plasma for implantation is found to be particularly suited for thin SOI fabrication required for future low-power IC applications.",

author = "Iyer, {S. Sundar Kumar} and Xiang Lu and Jingbao Liu and Barry Linder and Chenming Hu and Cheung, {Nathan W.} and Jing Min and Zhineng Fan and Paul Chu",

year = "1996",

language = "English",

pages = "764--767",

booktitle = "Proceedings of the International Conference on Ion Implantation Technology",

publisher = "IEEE",

address = "United States",

note = "Proceedings of the 1996 11th International Conference on Ion Implantation Technology ; Conference date: 16-06-1996 Through 21-06-1996",

}

Iyer, SSK, Lu, X, Liu, J, Linder, B, Hu, C, Cheung, NW, Min, J, Fan, Z & Chu, P 1996, Operational phase-space of separation by plasma implantation of oxygen (SPIMOX). in Proceedings of the International Conference on Ion Implantation Technology. IEEE, pp. 764-767, Proceedings of the 1996 11th International Conference on Ion Implantation Technology, Austin, TX, USA, 16/06/96.

Operational phase-space of separation by plasma implantation of oxygen (SPIMOX). / Iyer, S. Sundar Kumar; Lu, Xiang; Liu, Jingbao et al.
Proceedings of the International Conference on Ion Implantation Technology. IEEE, 1996. p. 764-767.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Operational phase-space of separation by plasma implantation of oxygen (SPIMOX)

AU - Iyer, S. Sundar Kumar

AU - Lu, Xiang

AU - Liu, Jingbao

AU - Linder, Barry

AU - Hu, Chenming

AU - Cheung, Nathan W.

AU - Min, Jing

AU - Fan, Zhineng

AU - Chu, Paul

PY - 1996

Y1 - 1996

N2 - SPIMOX using plasma immersion ion implantation (PIII) has been proposed as a cost-effective method for fabricating silicon on insulator (SOI) wafers. PIII, compared to conventional implanters, allows for simpler and low maintenance-cost implanters. High throughput, independent of the wafer size can be achieved by the SPIMOX process. A phase-space of implantation time and implantation pressure is developed to determine the operational regions for SPIMOX implantation. SPIMOX process using high fractional ionization plasma for implantation is found to be particularly suited for thin SOI fabrication required for future low-power IC applications.

AB - SPIMOX using plasma immersion ion implantation (PIII) has been proposed as a cost-effective method for fabricating silicon on insulator (SOI) wafers. PIII, compared to conventional implanters, allows for simpler and low maintenance-cost implanters. High throughput, independent of the wafer size can be achieved by the SPIMOX process. A phase-space of implantation time and implantation pressure is developed to determine the operational regions for SPIMOX implantation. SPIMOX process using high fractional ionization plasma for implantation is found to be particularly suited for thin SOI fabrication required for future low-power IC applications.

UR - http://www.scopus.com/inward/record.url?scp=0030350861&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0030350861&origin=recordpage

M3 - RGC 32 - Refereed conference paper (with host publication)

SP - 764

EP - 767

BT - Proceedings of the International Conference on Ion Implantation Technology

PB - IEEE

T2 - Proceedings of the 1996 11th International Conference on Ion Implantation Technology

Y2 - 16 June 1996 through 21 June 1996

ER -

Operational phase-space of separation by plasma implantation of oxygen (SPIMOX)

Abstract

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