Online condition monitoring of IGBT modules using current-change rate identification

M. H. Mohamed Sathik; S. Prasanth; F. Sasongko; J. Pou

doi:10.1016/j.microrel.2018.11.013

Online condition monitoring of IGBT modules using current-change rate identification

M. H. Mohamed Sathik
, S. Prasanth
, F. Sasongko
, J. Pou

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

17 Citations (Scopus)

Abstract

Insulated gate bipolar transistors have gained leading position in aerospace and marine applications. However, due to the fact that the power devices are exposed to electrical, thermal and mechanical stresses, the failure rates of these components are comparatively high, and it was found to be the main reason for reducing the reliability of the whole system. Therefore, this paper investigates an IGBT current change rate as a new potential precursor parameter to identify early failure of an IGBT devices. Ageing of IGBT devices and its effect on current change rate is investigated using accelerated power cycling test in order to trigger solder die-attach degradation and bond wire lift-off damage. Experimental investigation verifies that the increase in current change rate is a reflection of die-attach degradation. Lastly, a three-phase inverter system is developed for experiments to verify the proposed method in real time operating conditions. © 2018 Elsevier Ltd

Original language	English
Pages (from-to)	55-62
Journal	Microelectronics Reliability
Volume	92
DOIs	https://doi.org/10.1016/j.microrel.2018.11.013
Publication status	Published - 1 Jan 2019
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Funding

This study was conducted with support from the National Research Foundation (NRF) Singapore under the Corp Lab@University Scheme.

Research Keywords

Current-change rate
Gate-emitter capacitance
Health monitoring
Junction temperature estimation
Rogowski-coil

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10.1016/j.microrel.2018.11.013

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@article{06b73c6f99734ddda6413e5ed04803fa,

title = "Online condition monitoring of IGBT modules using current-change rate identification",

abstract = "Insulated gate bipolar transistors have gained leading position in aerospace and marine applications. However, due to the fact that the power devices are exposed to electrical, thermal and mechanical stresses, the failure rates of these components are comparatively high, and it was found to be the main reason for reducing the reliability of the whole system. Therefore, this paper investigates an IGBT current change rate as a new potential precursor parameter to identify early failure of an IGBT devices. Ageing of IGBT devices and its effect on current change rate is investigated using accelerated power cycling test in order to trigger solder die-attach degradation and bond wire lift-off damage. Experimental investigation verifies that the increase in current change rate is a reflection of die-attach degradation. Lastly, a three-phase inverter system is developed for experiments to verify the proposed method in real time operating conditions. {\textcopyright} 2018 Elsevier Ltd",

keywords = "Current-change rate, Gate-emitter capacitance, Health monitoring, Junction temperature estimation, Rogowski-coil",

author = "\{Mohamed Sathik\}, \{M. H.\} and S. Prasanth and F. Sasongko and J. Pou",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2019",

month = jan,

day = "1",

doi = "10.1016/j.microrel.2018.11.013",

language = "English",

volume = "92",

pages = "55--62",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd.",

}

TY - JOUR

T1 - Online condition monitoring of IGBT modules using current-change rate identification

AU - Mohamed Sathik, M. H.

AU - Prasanth, S.

AU - Sasongko, F.

AU - Pou, J.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Insulated gate bipolar transistors have gained leading position in aerospace and marine applications. However, due to the fact that the power devices are exposed to electrical, thermal and mechanical stresses, the failure rates of these components are comparatively high, and it was found to be the main reason for reducing the reliability of the whole system. Therefore, this paper investigates an IGBT current change rate as a new potential precursor parameter to identify early failure of an IGBT devices. Ageing of IGBT devices and its effect on current change rate is investigated using accelerated power cycling test in order to trigger solder die-attach degradation and bond wire lift-off damage. Experimental investigation verifies that the increase in current change rate is a reflection of die-attach degradation. Lastly, a three-phase inverter system is developed for experiments to verify the proposed method in real time operating conditions. © 2018 Elsevier Ltd

AB - Insulated gate bipolar transistors have gained leading position in aerospace and marine applications. However, due to the fact that the power devices are exposed to electrical, thermal and mechanical stresses, the failure rates of these components are comparatively high, and it was found to be the main reason for reducing the reliability of the whole system. Therefore, this paper investigates an IGBT current change rate as a new potential precursor parameter to identify early failure of an IGBT devices. Ageing of IGBT devices and its effect on current change rate is investigated using accelerated power cycling test in order to trigger solder die-attach degradation and bond wire lift-off damage. Experimental investigation verifies that the increase in current change rate is a reflection of die-attach degradation. Lastly, a three-phase inverter system is developed for experiments to verify the proposed method in real time operating conditions. © 2018 Elsevier Ltd

KW - Current-change rate

KW - Gate-emitter capacitance

KW - Health monitoring

KW - Junction temperature estimation

KW - Rogowski-coil

UR - https://www.scopus.com/pages/publications/85057345316

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85057345316&origin=recordpage

U2 - 10.1016/j.microrel.2018.11.013

DO - 10.1016/j.microrel.2018.11.013

M3 - RGC 21 - Publication in refereed journal

SN - 0026-2714

VL - 92

SP - 55

EP - 62

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Online condition monitoring of IGBT modules using current-change rate identification

Abstract

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Research Keywords

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