Online Condition Monitoring of Bond Wire Lift-Off in SiC MOSFETs Using Discrete Transmission Line Response to Gate Resistor Voltage in SiC MOSFET

Keqi Song; Henry Shu-Hung Chung

doi:10.1109/APEC51134.2026.11517101

Online Condition Monitoring of Bond Wire Lift-Off in SiC MOSFETs Using Discrete Transmission Line Response to Gate Resistor Voltage in SiC MOSFET

Keqi Song
, Henry Shu-Hung Chung

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

This article presents a novel online condition monitoring technique for SiC MOSFET bond wire lift-off. A discrete transmission line (DTL), connected in parallel with the gate resistor, serves as a sensing medium. The DTL is specifically tuned to be highly sensitive to the resonant network formed by the MOSFET's intrinsic source inductance and gate-source capacitance. An increase in source inductance from bond wire degradation alters the DTL's standing wave pattern, providing a clear failure indicator. The method uniquely decouples inductance and capacitance variations by analyzing the DTL's high- and low- frequency responses. Validated on a 500W, 100kHz buck converter using an emulated fault, experimental results showed excellent agreement with theory, confirming the technique's effectiveness. © 2026 IEEE.

Original language	English
Title of host publication	2026 IEEE Applied Power Electronics Conference and Exposition (APEC)
Publisher	IEEE
Pages	3432-3436
Number of pages	5
ISBN (Electronic)	979-8-3315-7544-1
DOIs	https://doi.org/10.1109/APEC51134.2026.11517101
Publication status	Published - 2026
Event	41st IEEE Applied Power Electronics Conference and Exposition (APEC 2026) - Henry B. González Convention Center, San Antonio, United States Duration: 22 Mar 2026 → 26 Mar 2026 https://apec-conf.org/wp-content/uploads/2026/03/APEC-2026-Program-Book-20260223.pdf

Publication series

Name	Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Volume	2026-March
ISSN (Print)	1048-2334
ISSN (Electronic)	2470-6647

Conference

Conference	41st IEEE Applied Power Electronics Conference and Exposition (APEC 2026)
Place	United States
City	San Antonio
Period	22/03/26 → 26/03/26
Internet address	https://apec-conf.org/wp-content/uploads/2026/03/APEC-2026-Program-Book-20260223.pdf

Funding

This work was supported by the Innovation and Technology Fund from the Hong Kong Special Administrative Region, China, under Project #MRP/010/21X.

Research Keywords

bond wire lift-off
diagnosis
online condition monitoring
SiC MOSFET

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10.1109/APEC51134.2026.11517101

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Song, K., & Chung, H. S.-H. (2026). Online Condition Monitoring of Bond Wire Lift-Off in SiC MOSFETs Using Discrete Transmission Line Response to Gate Resistor Voltage in SiC MOSFET. In 2026 IEEE Applied Power Electronics Conference and Exposition (APEC) (pp. 3432-3436). (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2026-March). IEEE. https://doi.org/10.1109/APEC51134.2026.11517101

Song, Keqi ; Chung, Henry Shu-Hung. / Online Condition Monitoring of Bond Wire Lift-Off in SiC MOSFETs Using Discrete Transmission Line Response to Gate Resistor Voltage in SiC MOSFET. 2026 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2026. pp. 3432-3436 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).

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title = "Online Condition Monitoring of Bond Wire Lift-Off in SiC MOSFETs Using Discrete Transmission Line Response to Gate Resistor Voltage in SiC MOSFET",

abstract = "This article presents a novel online condition monitoring technique for SiC MOSFET bond wire lift-off. A discrete transmission line (DTL), connected in parallel with the gate resistor, serves as a sensing medium. The DTL is specifically tuned to be highly sensitive to the resonant network formed by the MOSFET's intrinsic source inductance and gate-source capacitance. An increase in source inductance from bond wire degradation alters the DTL's standing wave pattern, providing a clear failure indicator. The method uniquely decouples inductance and capacitance variations by analyzing the DTL's high- and low- frequency responses. Validated on a 500W, 100kHz buck converter using an emulated fault, experimental results showed excellent agreement with theory, confirming the technique's effectiveness. {\textcopyright} 2026 IEEE.",

keywords = "bond wire lift-off, diagnosis, online condition monitoring, SiC MOSFET",

author = "Keqi Song and Chung, \{Henry Shu-Hung\}",

year = "2026",

doi = "10.1109/APEC51134.2026.11517101",

language = "English",

series = "Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC",

publisher = "IEEE",

pages = "3432--3436",

booktitle = "2026 IEEE Applied Power Electronics Conference and Exposition (APEC)",

address = "United States",

note = "41st IEEE Applied Power Electronics Conference and Exposition (APEC 2026) ; Conference date: 22-03-2026 Through 26-03-2026",

url = "https://apec-conf.org/wp-content/uploads/2026/03/APEC-2026-Program-Book-20260223.pdf",

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Song, K & Chung, HS-H 2026, Online Condition Monitoring of Bond Wire Lift-Off in SiC MOSFETs Using Discrete Transmission Line Response to Gate Resistor Voltage in SiC MOSFET. in 2026 IEEE Applied Power Electronics Conference and Exposition (APEC). Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, vol. 2026-March, IEEE, pp. 3432-3436, 41st IEEE Applied Power Electronics Conference and Exposition (APEC 2026), San Antonio, United States, 22/03/26. https://doi.org/10.1109/APEC51134.2026.11517101

Online Condition Monitoring of Bond Wire Lift-Off in SiC MOSFETs Using Discrete Transmission Line Response to Gate Resistor Voltage in SiC MOSFET. / Song, Keqi; Chung, Henry Shu-Hung.
2026 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2026. p. 3432-3436 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2026-March).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Online Condition Monitoring of Bond Wire Lift-Off in SiC MOSFETs Using Discrete Transmission Line Response to Gate Resistor Voltage in SiC MOSFET

AU - Song, Keqi

AU - Chung, Henry Shu-Hung

PY - 2026

Y1 - 2026

N2 - This article presents a novel online condition monitoring technique for SiC MOSFET bond wire lift-off. A discrete transmission line (DTL), connected in parallel with the gate resistor, serves as a sensing medium. The DTL is specifically tuned to be highly sensitive to the resonant network formed by the MOSFET's intrinsic source inductance and gate-source capacitance. An increase in source inductance from bond wire degradation alters the DTL's standing wave pattern, providing a clear failure indicator. The method uniquely decouples inductance and capacitance variations by analyzing the DTL's high- and low- frequency responses. Validated on a 500W, 100kHz buck converter using an emulated fault, experimental results showed excellent agreement with theory, confirming the technique's effectiveness. © 2026 IEEE.

AB - This article presents a novel online condition monitoring technique for SiC MOSFET bond wire lift-off. A discrete transmission line (DTL), connected in parallel with the gate resistor, serves as a sensing medium. The DTL is specifically tuned to be highly sensitive to the resonant network formed by the MOSFET's intrinsic source inductance and gate-source capacitance. An increase in source inductance from bond wire degradation alters the DTL's standing wave pattern, providing a clear failure indicator. The method uniquely decouples inductance and capacitance variations by analyzing the DTL's high- and low- frequency responses. Validated on a 500W, 100kHz buck converter using an emulated fault, experimental results showed excellent agreement with theory, confirming the technique's effectiveness. © 2026 IEEE.

KW - bond wire lift-off

KW - diagnosis

KW - online condition monitoring

KW - SiC MOSFET

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UR - https://www.scopus.com/pages/publications/105040978352#tab=impact

U2 - 10.1109/APEC51134.2026.11517101

DO - 10.1109/APEC51134.2026.11517101

M3 - RGC 32 - Refereed conference paper (with host publication)

T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

SP - 3432

EP - 3436

BT - 2026 IEEE Applied Power Electronics Conference and Exposition (APEC)

PB - IEEE

T2 - 41st IEEE Applied Power Electronics Conference and Exposition (APEC 2026)

Y2 - 22 March 2026 through 26 March 2026

ER -

Song K, Chung HSH. Online Condition Monitoring of Bond Wire Lift-Off in SiC MOSFETs Using Discrete Transmission Line Response to Gate Resistor Voltage in SiC MOSFET. In 2026 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE. 2026. p. 3432-3436. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). Epub 2026 May 20. doi: 10.1109/APEC51134.2026.11517101

Online Condition Monitoring of Bond Wire Lift-Off in SiC MOSFETs Using Discrete Transmission Line Response to Gate Resistor Voltage in SiC MOSFET

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Online Condition Monitoring of Bond Wire Lift-Off in SiC MOSFETs Using Discrete Transmission Line Response to Gate Resistor Voltage in SiC MOSFET

Abstract

Publication series

Conference

Funding

Research Keywords

Access Output

Other Access Options

Permanent Link

Other Files and Links

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Projects

ITF: DC Capacitorless Multi-port Direct Matrix Converter for Green Power Systems

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