One-dimensional growth mechanism of crystalline silicon nanowires

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Y. F. Zhang
  • Y. H. Tang
  • N. Wang
  • I. Bello
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)136-140
Journal / PublicationJournal of Crystal Growth
Volume197
Issue number1-2
Publication statusPublished - 1999

Abstract

Based on experimental observations of silicon nanowire growth, a new mechanism has been proposed for one-dimensional growth of crystalline nanowires from the vapor phase. In the growth process, an amorphous matrix is deposited from a vapor phase of unsaturated oxide nanoclusters, and subsequent phase separation in the matrix leads to the formation of nanowires with a single crystalline core and an oxide sheath. The oxide sheath serves to terminate the growth in the lateral direction, thus inducing the one-dimensional growth of crystalline nanowires. © 1999 Elsevier Science B.V. All rights reserved.

Citation Format(s)

One-dimensional growth mechanism of crystalline silicon nanowires. / Zhang, Y. F.; Tang, Y. H.; Wang, N. et al.
In: Journal of Crystal Growth, Vol. 197, No. 1-2, 1999, p. 136-140.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review