One-dimensional growth mechanism of crystalline silicon nanowires

Based on experimental observations of silicon nanowire growth, a new mechanism has been proposed for one-dimensional growth of crystalline nanowires from the vapor phase. In the growth process, an amorphous matrix is deposited from a vapor phase of unsaturated oxide nanoclusters, and subsequent phase separation in the matrix leads to the formation of nanowires with a single crystalline core and an oxide sheath. The oxide sheath serves to terminate the growth in the lateral direction, thus inducing the one-dimensional growth of crystalline nanowires. © 1999 Elsevier Science B.V. All rights reserved.