On the reliability issues of RF CMOS devices

Hei Wong; Yue Fu; J. J. Liou; Yun Yue; Hiroshi Iwai

doi:10.1109/ICSICT.2006.306695

On the reliability issues of RF CMOS devices

Hei Wong
, Yue Fu
, J. J. Liou
, Yun Yue
, Hiroshi Iwai

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

2 Citations (Scopus)

Abstract

Although multi-finger MOS structures have demonstrated very attractive behaviors for high-frequency analog circuit applications, the shared drain and source regions for adjacent gate fingers have led to current crowding and results in the finger number-dependent current-voltage characteristics. In addition, the high current density spots near the drain region would deteriorate the MOS reliability in several aspects. Present results suggest that the common drain regions should be wider and more heavily doped in order to alleviate these effects. © 2006 IEEE.

Original language	English
Title of host publication	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	1105-1108
DOIs	https://doi.org/10.1109/ICSICT.2006.306695
Publication status	Published - 2007
Event	8th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2006) - Shanghai, China Duration: 23 Oct 2006 → 26 Oct 2006

Conference

Conference	8th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2006)
Abbreviated title	ICSICT-2006
Place	China
City	Shanghai
Period	23/10/06 → 26/10/06

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@inproceedings{3ed11ac3b0c94885852d9a7584e1ed7d,

title = "On the reliability issues of RF CMOS devices",

abstract = "Although multi-finger MOS structures have demonstrated very attractive behaviors for high-frequency analog circuit applications, the shared drain and source regions for adjacent gate fingers have led to current crowding and results in the finger number-dependent current-voltage characteristics. In addition, the high current density spots near the drain region would deteriorate the MOS reliability in several aspects. Present results suggest that the common drain regions should be wider and more heavily doped in order to alleviate these effects. {\textcopyright} 2006 IEEE.",

author = "Hei Wong and Yue Fu and Liou, \{J. J.\} and Yun Yue and Hiroshi Iwai",

year = "2007",

doi = "10.1109/ICSICT.2006.306695",

language = "English",

isbn = "1424401615",

pages = "1105--1108",

booktitle = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "8th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2006), ICSICT-2006 ; Conference date: 23-10-2006 Through 26-10-2006",

}

Wong, H, Fu, Y, Liou, JJ, Yue, Y & Iwai, H 2007, On the reliability issues of RF CMOS devices. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098336, pp. 1105-1108, 8th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2006), Shanghai, China, 23/10/06. https://doi.org/10.1109/ICSICT.2006.306695

On the reliability issues of RF CMOS devices. / Wong, Hei; Fu, Yue; Liou, J. J. et al.
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2007. p. 1105-1108 4098336.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - On the reliability issues of RF CMOS devices

AU - Wong, Hei

AU - Fu, Yue

AU - Liou, J. J.

AU - Yue, Yun

AU - Iwai, Hiroshi

PY - 2007

Y1 - 2007

N2 - Although multi-finger MOS structures have demonstrated very attractive behaviors for high-frequency analog circuit applications, the shared drain and source regions for adjacent gate fingers have led to current crowding and results in the finger number-dependent current-voltage characteristics. In addition, the high current density spots near the drain region would deteriorate the MOS reliability in several aspects. Present results suggest that the common drain regions should be wider and more heavily doped in order to alleviate these effects. © 2006 IEEE.

AB - Although multi-finger MOS structures have demonstrated very attractive behaviors for high-frequency analog circuit applications, the shared drain and source regions for adjacent gate fingers have led to current crowding and results in the finger number-dependent current-voltage characteristics. In addition, the high current density spots near the drain region would deteriorate the MOS reliability in several aspects. Present results suggest that the common drain regions should be wider and more heavily doped in order to alleviate these effects. © 2006 IEEE.

UR - https://www.scopus.com/pages/publications/34547334472

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-34547334472&origin=recordpage

U2 - 10.1109/ICSICT.2006.306695

DO - 10.1109/ICSICT.2006.306695

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 1424401615

SN - 9781424401611

SP - 1105

EP - 1108

BT - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 8th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2006)

Y2 - 23 October 2006 through 26 October 2006

ER -

On the reliability issues of RF CMOS devices

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