On the nitridation-induced enhancement and degradation of MOSFET characteristics

H. Wong; Y. C. Cheng

doi:10.1016/0038-1101(90)90226-5

On the nitridation-induced enhancement and degradation of MOSFET characteristics

H. Wong, Y. C. Cheng

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Original language	English
Pages (from-to)	1107-1109
Journal	Solid State Electronics
Volume	33
Issue number	8
DOIs	https://doi.org/10.1016/0038-1101(90)90226-5
Publication status	Published - Aug 1990
Externally published	Yes

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@article{217ff58d2cc24b9bb10a1dc132f11aaa,

title = "On the nitridation-induced enhancement and degradation of MOSFET characteristics",

author = "H. Wong and Cheng, {Y. C.}",

year = "1990",

month = aug,

doi = "10.1016/0038-1101(90)90226-5",

language = "English",

volume = "33",

pages = "1107--1109",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "8",

}

TY - JOUR

T1 - On the nitridation-induced enhancement and degradation of MOSFET characteristics

AU - Wong, H.

AU - Cheng, Y. C.

PY - 1990/8

Y1 - 1990/8

UR - http://www.scopus.com/inward/record.url?scp=0025470545&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0025470545&origin=recordpage

U2 - 10.1016/0038-1101(90)90226-5

DO - 10.1016/0038-1101(90)90226-5

M3 - RGC 21 - Publication in refereed journal

SN - 0038-1101

VL - 33

SP - 1107

EP - 1109

JO - Solid State Electronics

JF - Solid State Electronics

IS - 8

ER -

On the nitridation-induced enhancement and degradation of MOSFET characteristics

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