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On The Mechanism of Fatigue in Micron-Scale Structural Films of Polycrystalline Silicon

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

2-μm thick structural films of polycrystalline silicon are shown to display "metal-like" stress-life fatigue behavior in room air, with failures occurring after > 1011 cycles at stresses as low as half the fracture strength. Using in situ measurements of the specimen compliance and transmission electron microscopy to characterize such damage, the mechanism of thin-film silicon fatigue is deduced to be sequential oxidation and moisture-assisted cracking in the native SiO2 layer. This mechanism can also occur in bulk silicon but it is only relevant in thin films where the critical crack size for catastrophic failure can be exceeded within the oxide layer. The fatigue susceptibility of thin-film silicon is shown to be suppressed by alkene-based self-assembled monolayer coatings that prevent the formation of the native oxide.
Original languageEnglish
Title of host publicationSurface Engineering 2001 - Fundamentals and Applications
Subtitle of host publicationSymposium P
Pages227-234
DOIs
Publication statusPublished - Nov 2001
Externally publishedYes
Event2001 MRS Fall Meeting & Exhibit - Boston, United States
Duration: 25 Nov 200130 Nov 2001

Publication series

NameMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Volume697
ISSN (Print)0272-9172

Conference

Conference2001 MRS Fall Meeting & Exhibit
PlaceUnited States
CityBoston
Period25/11/0130/11/01

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