On the Issues of Subnanometer EOT Gate Dielectric Scaling

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Detail(s)

Original languageEnglish
Title of host publication2019 8th International Symposium on Next Generation Electronics (ISNE)
PublisherIEEE
ISBN (Electronic)9781728120621
ISBN (Print)9781728120638
Publication statusPublished - Oct 2019

Publication series

NameInternational Symposium on Next Generation Electronics, ISNE
ISSN (Print)2378-8593
ISSN (Electronic)2378-8607

Conference

Title8th International Symposium on Next Generation Electronics (ISNE 2019)
PlaceChina
CityZhengzhou
Period9 - 10 October 2019

Abstract

Only with a few generations after the introduction of high-dielectric constant (high-k) gate dielectric for equivalent oxide thickness (EOT) scaling, the scaling rate has lost its momentum already. The EOT of the state-of-The-Art technology is in the range of 0.8 to 0.9 nm which is not much thinner than the tunneling silicon oxide used before the adoption of high-k or EOT strategy; it is predicted that the downsizing rate will be around 0.03 nm/generation only. There are some fundamental technological issues limit the subnanometer EOT scaling, not to mention there are lots of characteristic degradation and reliability issues for the adoption of high-k film. In this talk, we shall review the scaling trend and key technological advancements in CMOS gate dielectric scaling. Then the technological limitations due to the interface layers and surface roughness when the EOT approaching atomic scale/roughness scale will be discussed in detail.

Research Area(s)

  • EOT scaling, high-k, instabilities, interface

Citation Format(s)

On the Issues of Subnanometer EOT Gate Dielectric Scaling. / Wong, Hei; Liou, J. J.; Wei, R. H.

2019 8th International Symposium on Next Generation Electronics (ISNE). IEEE, 2019. 8896356 (International Symposium on Next Generation Electronics, ISNE).

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review