On the formation of solid state crystallized intrinsic polycrystalline germanium thin films

Zhiguo Meng; Zhonghe Jin; Gururaj A. Bhat; Paul Chu; Hoi S. Kwok; Man Wong

doi:10.1557/JMR.1997.0338

On the formation of solid state crystallized intrinsic polycrystalline germanium thin films

Zhiguo Meng
, Zhonghe Jin
, Gururaj A. Bhat
, Paul Chu
, Hoi S. Kwok
, Man Wong

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

5 Citations (Scopus)

Abstract

A two-step heat treatment process has been employed to crystallize low pressure deposited thin films of amorphous germanium. Large grain p-type polycrystalline germanium with a Hall effect hole mobility of greater than 300 cm²/Vs has been obtained. Films with near intrinsic conductivity, necessary for the construction of practical enhancement-mode insulated-gate thin film transistors, were obtained by introducing phosphorus as a compensating dopant. High Hall effect electron mobility of 245 cm²/Vs has been measured on the resulting n-type polycrystalline germanium thin films.

Original language	English
Pages (from-to)	2548-2551
Journal	Journal of Materials Research
Volume	12
Issue number	10
DOIs	https://doi.org/10.1557/JMR.1997.0338
Publication status	Published - Oct 1997

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access Output

10.1557/JMR.1997.0338

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{3f72c8c2b29c41fe9cc677c530da2563,

title = "On the formation of solid state crystallized intrinsic polycrystalline germanium thin films",

abstract = "A two-step heat treatment process has been employed to crystallize low pressure deposited thin films of amorphous germanium. Large grain p-type polycrystalline germanium with a Hall effect hole mobility of greater than 300 cm2/Vs has been obtained. Films with near intrinsic conductivity, necessary for the construction of practical enhancement-mode insulated-gate thin film transistors, were obtained by introducing phosphorus as a compensating dopant. High Hall effect electron mobility of 245 cm2/Vs has been measured on the resulting n-type polycrystalline germanium thin films.",

author = "Zhiguo Meng and Zhonghe Jin and Bhat, \{Gururaj A.\} and Paul Chu and Kwok, \{Hoi S.\} and Man Wong",

year = "1997",

month = oct,

doi = "10.1557/JMR.1997.0338",

language = "English",

volume = "12",

pages = "2548--2551",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Springer International Publishing ",

number = "10",

}

TY - JOUR

T1 - On the formation of solid state crystallized intrinsic polycrystalline germanium thin films

AU - Meng, Zhiguo

AU - Jin, Zhonghe

AU - Bhat, Gururaj A.

AU - Chu, Paul

AU - Kwok, Hoi S.

AU - Wong, Man

PY - 1997/10

Y1 - 1997/10

N2 - A two-step heat treatment process has been employed to crystallize low pressure deposited thin films of amorphous germanium. Large grain p-type polycrystalline germanium with a Hall effect hole mobility of greater than 300 cm2/Vs has been obtained. Films with near intrinsic conductivity, necessary for the construction of practical enhancement-mode insulated-gate thin film transistors, were obtained by introducing phosphorus as a compensating dopant. High Hall effect electron mobility of 245 cm2/Vs has been measured on the resulting n-type polycrystalline germanium thin films.

AB - A two-step heat treatment process has been employed to crystallize low pressure deposited thin films of amorphous germanium. Large grain p-type polycrystalline germanium with a Hall effect hole mobility of greater than 300 cm2/Vs has been obtained. Films with near intrinsic conductivity, necessary for the construction of practical enhancement-mode insulated-gate thin film transistors, were obtained by introducing phosphorus as a compensating dopant. High Hall effect electron mobility of 245 cm2/Vs has been measured on the resulting n-type polycrystalline germanium thin films.

UR - https://www.scopus.com/pages/publications/0031246552

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0031246552&origin=recordpage

U2 - 10.1557/JMR.1997.0338

DO - 10.1557/JMR.1997.0338

M3 - RGC 21 - Publication in refereed journal

SN - 0884-2914

VL - 12

SP - 2548

EP - 2551

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 10

ER -

On the formation of solid state crystallized intrinsic polycrystalline germanium thin films

Abstract

UN SDGs

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this