On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Detail(s)

Original languageEnglish
Title of host publication2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3-8
ISBN (Electronic)9781728134192
ISBN (Print)9781728134208
Publication statusPublished - Sep 2019

Publication series

NameProceedings (International Conference on Microelectronics)
ISSN (Print)2159-1660
ISSN (Electronic)2159-1679

Conference

Title31st IEEE International Conference on Microelectronics, MIEL 2019
PlaceSerbia
CityNis
Period16 - 18 September 2019

Abstract

Electrostatic discharge (ESD) has been one of the major causes for the failure of electronic equipment and components and have attracted quite significant research efforts in minimizing the losses induced. Much tougher challenge comes up in the nano CMOS era. For the device technology itself, the aggressive scaling on gate length, high-k replacement of gate oxide, and the reduction of supply voltage have made the design window of ESD protection device be ever narrower. New ESD protection devices are yet to be developed for the 10 nm technology and beyond. For system and application level, the mobile devices we used right now are much vulnerable as they are more frequent to be exposed to various sources of ESD and power surges. Fatal ESD strike protection is always the primary design specification and should have been mostly fulfilled. The effects of non-fatal ESD strike has not attracted much attention yet. Recent experiment showed that the non-fatal ESD strikes at gate and drain can cause significant charge trapping and trap generation. It resulted in the device characteristic degradation and hence some reliability issues of CMOS circuits and the MOS-based ESD clamps. This review addresses all these issues in detail. © 2019 IEEE.

Citation Format(s)

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices. / Wong, H.; Dong, S.; Chen, Z.

2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. p. 3-8 8889652 (Proceedings (International Conference on Microelectronics)).

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review