Observations of Al segregation around dislocations in AlGaN
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 928-930 |
| Journal / Publication | Applied Physics Letters |
| Volume | 79 |
| Issue number | 7 |
| Publication status | Published - 13 Aug 2001 |
| Externally published | Yes |
Link(s)
Abstract
Transmission electron microscopy has been used to observe Al segregation around the threading dislocations in Al0.1Ga0.9N and Al0.3Ga0.7N grown by metalorganic chemical vapor deposition on 6H-SiC. Dislocation lines were found to have up to 70% more Al concentration than those regions free of dislocations in the matrix. The Al-depleted regions around the dislocations are shown to be within a few nanometers from the dislocation lines. The results also show that more Al segregate to edge dislocations than to screw ones. © 2001 American Institute of Physics.
Citation Format(s)
Observations of Al segregation around dislocations in AlGaN. / Chang, L.; Lai, S. K.; Chen, F. R. et al.
In: Applied Physics Letters, Vol. 79, No. 7, 13.08.2001, p. 928-930.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
