Observation of photogalvanic current for interband absorption in InN films at room temperature
Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with ISBN/ISSN) › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Title of host publication | 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 |
| Pages | 1066-1069 |
| Publication status | Published - 2008 |
| Externally published | Yes |
Conference
| Title | 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 |
|---|---|
| Place | China |
| City | Shanghai |
| Period | 24 - 27 March 2008 |
Link(s)
Abstract
The linear and circular photogalvanic effects have been observed in undoped InN films for the interband transition by irradiation of 1060 nm laser at room temperature. The spin polarized photocurrent depends on the degree of polarization, and changes its sign when the radiation helicity changes from left-handed to right-handed. This result indicates the sizeable spin-orbit interaction in the InN epitaxial layer and provides an effective method to generate spin polarized photocurrent and to detect spin-splitting effect in semiconductors with promising applications on spintronics. © 2008 IEEE.
Citation Format(s)
Observation of photogalvanic current for interband absorption in InN films at room temperature. / Tang, C. G.; Chen, Y. H.; Liu, Y. et al.
2008 2nd IEEE International Nanoelectronics Conference, INEC 2008. 2008. p. 1066-1069 4585667.Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with ISBN/ISSN) › peer-review
