Observation of photogalvanic current for interband absorption in InN films at room temperature

C. G. Tang; Y. H. Chen; Y. Liu; R. Q. Zhang; X. L. Liu; Z. G. Wang; R. Zhang; Z. Zhang

doi:10.1109/INEC.2008.4585667

Observation of photogalvanic current for interband absorption in InN films at room temperature

C. G. Tang
, Y. H. Chen
, Y. Liu
, R. Q. Zhang
, X. L. Liu
, Z. G. Wang
, R. Zhang
, Z. Zhang

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

The linear and circular photogalvanic effects have been observed in undoped InN films for the interband transition by irradiation of 1060 nm laser at room temperature. The spin polarized photocurrent depends on the degree of polarization, and changes its sign when the radiation helicity changes from left-handed to right-handed. This result indicates the sizeable spin-orbit interaction in the InN epitaxial layer and provides an effective method to generate spin polarized photocurrent and to detect spin-splitting effect in semiconductors with promising applications on spintronics. © 2008 IEEE.

Original language	English
Title of host publication	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages	1066-1069
DOIs	https://doi.org/10.1109/INEC.2008.4585667
Publication status	Published - 2008
Externally published	Yes
Event	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China Duration: 24 Mar 2008 → 27 Mar 2008

Conference

Conference	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Place	China
City	Shanghai
Period	24/03/08 → 27/03/08

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10.1109/INEC.2008.4585667

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@inproceedings{c810f8538263460daaf32ffa59d1633c,

title = "Observation of photogalvanic current for interband absorption in InN films at room temperature",

abstract = "The linear and circular photogalvanic effects have been observed in undoped InN films for the interband transition by irradiation of 1060 nm laser at room temperature. The spin polarized photocurrent depends on the degree of polarization, and changes its sign when the radiation helicity changes from left-handed to right-handed. This result indicates the sizeable spin-orbit interaction in the InN epitaxial layer and provides an effective method to generate spin polarized photocurrent and to detect spin-splitting effect in semiconductors with promising applications on spintronics. {\textcopyright} 2008 IEEE.",

author = "Tang, \{C. G.\} and Chen, \{Y. H.\} and Y. Liu and Zhang, \{R. Q.\} and Liu, \{X. L.\} and Wang, \{Z. G.\} and R. Zhang and Z. Zhang",

year = "2008",

doi = "10.1109/INEC.2008.4585667",

language = "English",

isbn = "9781424415731",

pages = "1066--1069",

booktitle = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008",

note = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 ; Conference date: 24-03-2008 Through 27-03-2008",

}

Tang, CG, Chen, YH, Liu, Y, Zhang, RQ, Liu, XL, Wang, ZG, Zhang, R & Zhang, Z 2008, Observation of photogalvanic current for interband absorption in InN films at room temperature. in 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008., 4585667, pp. 1066-1069, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, Shanghai, China, 24/03/08. https://doi.org/10.1109/INEC.2008.4585667

Observation of photogalvanic current for interband absorption in InN films at room temperature. / Tang, C. G.; Chen, Y. H.; Liu, Y. et al.
2008 2nd IEEE International Nanoelectronics Conference, INEC 2008. 2008. p. 1066-1069 4585667.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Observation of photogalvanic current for interband absorption in InN films at room temperature

AU - Tang, C. G.

AU - Chen, Y. H.

AU - Liu, Y.

AU - Zhang, R. Q.

AU - Liu, X. L.

AU - Wang, Z. G.

AU - Zhang, R.

AU - Zhang, Z.

PY - 2008

Y1 - 2008

N2 - The linear and circular photogalvanic effects have been observed in undoped InN films for the interband transition by irradiation of 1060 nm laser at room temperature. The spin polarized photocurrent depends on the degree of polarization, and changes its sign when the radiation helicity changes from left-handed to right-handed. This result indicates the sizeable spin-orbit interaction in the InN epitaxial layer and provides an effective method to generate spin polarized photocurrent and to detect spin-splitting effect in semiconductors with promising applications on spintronics. © 2008 IEEE.

AB - The linear and circular photogalvanic effects have been observed in undoped InN films for the interband transition by irradiation of 1060 nm laser at room temperature. The spin polarized photocurrent depends on the degree of polarization, and changes its sign when the radiation helicity changes from left-handed to right-handed. This result indicates the sizeable spin-orbit interaction in the InN epitaxial layer and provides an effective method to generate spin polarized photocurrent and to detect spin-splitting effect in semiconductors with promising applications on spintronics. © 2008 IEEE.

UR - https://www.scopus.com/pages/publications/52649086355

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-52649086355&origin=recordpage

U2 - 10.1109/INEC.2008.4585667

DO - 10.1109/INEC.2008.4585667

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781424415731

SP - 1066

EP - 1069

BT - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

T2 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Y2 - 24 March 2008 through 27 March 2008

ER -

Observation of photogalvanic current for interband absorption in InN films at room temperature

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