Observation of persistent photoconductance in single ZnO nanotube

Peng Liu; Guangwei She; Zhaoliang Liao; Yao Wang; Zhenzhong Wang; Wensheng Shi; Xiaohong Zhang; Shuit-Tong Lee; Dongmin Chen

doi:10.1063/1.3082173

Observation of persistent photoconductance in single ZnO nanotube

Peng Liu, Guangwei She, Zhaoliang Liao, Yao Wang, Zhenzhong Wang, Wensheng Shi, Xiaohong Zhang, Shuit-Tong Lee, Dongmin Chen

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

33 Citations (Scopus)

Abstract

Vertically aligned ZnO nanotube fabricated on an indium tin oxide substrate is found to exhibit strong persistent photoconductivity (PPC). Excitation wavelength-dependent conductance measurement on individual ZnO nanotube reveals the presence of defect states at 240 meV above the valence band edge, which are directly associated with the PPC effect. Our observations are consistent with the hypothesis that double ionization of defect-localized states is responsible for the PPC effect. © 2009 American Institute of Physics.

Original language	English
Article number	63120
Journal	Applied Physics Letters
Volume	94
Issue number	6
DOIs	https://doi.org/10.1063/1.3082173
Publication status	Published - 2009

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title = "Observation of persistent photoconductance in single ZnO nanotube",

abstract = "Vertically aligned ZnO nanotube fabricated on an indium tin oxide substrate is found to exhibit strong persistent photoconductivity (PPC). Excitation wavelength-dependent conductance measurement on individual ZnO nanotube reveals the presence of defect states at 240 meV above the valence band edge, which are directly associated with the PPC effect. Our observations are consistent with the hypothesis that double ionization of defect-localized states is responsible for the PPC effect. {\textcopyright} 2009 American Institute of Physics.",

author = "Peng Liu and Guangwei She and Zhaoliang Liao and Yao Wang and Zhenzhong Wang and Wensheng Shi and Xiaohong Zhang and Shuit-Tong Lee and Dongmin Chen",

year = "2009",

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language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Observation of persistent photoconductance in single ZnO nanotube

AU - Liu, Peng

AU - She, Guangwei

AU - Liao, Zhaoliang

AU - Wang, Yao

AU - Wang, Zhenzhong

AU - Shi, Wensheng

AU - Zhang, Xiaohong

AU - Lee, Shuit-Tong

AU - Chen, Dongmin

PY - 2009

Y1 - 2009

N2 - Vertically aligned ZnO nanotube fabricated on an indium tin oxide substrate is found to exhibit strong persistent photoconductivity (PPC). Excitation wavelength-dependent conductance measurement on individual ZnO nanotube reveals the presence of defect states at 240 meV above the valence band edge, which are directly associated with the PPC effect. Our observations are consistent with the hypothesis that double ionization of defect-localized states is responsible for the PPC effect. © 2009 American Institute of Physics.

AB - Vertically aligned ZnO nanotube fabricated on an indium tin oxide substrate is found to exhibit strong persistent photoconductivity (PPC). Excitation wavelength-dependent conductance measurement on individual ZnO nanotube reveals the presence of defect states at 240 meV above the valence band edge, which are directly associated with the PPC effect. Our observations are consistent with the hypothesis that double ionization of defect-localized states is responsible for the PPC effect. © 2009 American Institute of Physics.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-60349122830&origin=recordpage

U2 - 10.1063/1.3082173

DO - 10.1063/1.3082173

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 63120

ER -

Observation of persistent photoconductance in single ZnO nanotube

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