Abstract
Photonic crystals, in the form of closed-packed nano-pillar arrays patterned by nanosphere lithography, have been formed on the n-faces of InGaN thin-film vertical light-emitting diodes (LEDs). Through laser lift-off of the sapphire substrate, the thin-film LEDs conduct vertically with reduced dynamic resistances, as well as reduced thermal resistances. The photonic crystal plays a role in enhancing light extraction, not only at visible wavelengths but also at infrared wavelengths boosting heat radiation at high currents, so that heat-induced effects on internal quantum efficiencies are minimized. The observations are consistent with predictions from finite-difference time-domain simulations. © 2014 AIP Publishing LLC.
| Original language | English |
|---|---|
| Article number | 071104 |
| Journal | Applied Physics Letters |
| Volume | 105 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 18 Aug 2014 |
| Externally published | Yes |
Bibliographical note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].Funding
This work was jointly supported by the Theme-based Research Scheme (T22-715/12-N) and a General Research Fund (HKU711212E) of the Research Grant Council of Hong Kong.