Numerical study of self-heating effects of MOSFETs fabricated on SOAN substrate

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

43 Scopus Citations
View graph of relations

Author(s)

  • Ming Zhu
  • Peng Chen
  • Ricky K.-Y. Fu
  • Zhenghua An
  • Chenglu Lin

Detail(s)

Original languageEnglish
Pages (from-to)901-906
Journal / PublicationIEEE Transactions on Electron Devices
Volume51
Issue number6
Publication statusPublished - Jun 2004

Abstract

A two-dimensional numerical analysis is performed to investigate the self-heating effects of metal-oxide-silicon field-effect transistors (MOSFETs) fabricated in silicon-on-aluminum nitride (SOAN) substrate. The electrical characteristics and temperature distribution are simulated and compared to those of bulk and standard silicon-on-insulator (SOI) MOSFETs. The SOAN devices are shown to have good leakage and subhreshold characteristics. Furthermore, the channel temperature and negative differential resistance are reduced during high-temperature operation, suggesting that SOAN can mitigate the self-heating penalty effectively. Our study suggests that AlN is a suitable alternative to silicon dioxide as the buried dielectric in SOI, and expands the applications of SOI to high temperature.

Research Area(s)

  • Aluminum nitride (AlN), Numerical simulation, Self-heating effect, Silicon-on-insulator (SOI)

Citation Format(s)

Numerical study of self-heating effects of MOSFETs fabricated on SOAN substrate. / Zhu, Ming; Chen, Peng; Fu, Ricky K.-Y.; An, Zhenghua; Lin, Chenglu; Chu, Paul K.

In: IEEE Transactions on Electron Devices, Vol. 51, No. 6, 06.2004, p. 901-906.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review