@inproceedings{1b7459133eae482baec738908723cad7,
title = "Numerical study of one-fold coordinated oxygen atom in silicon gate oxide",
abstract = "The capturing properties of nonbridging oxygen hole centers with unpaired electrons ≡SiO· and hydrogen defects ≡SiOH in silicon oxide have been studied using the ab initio density-functional method. It was found that the ≡SiO· defect is an electron trap and should be the responsible candidate for better hardness against radiation for the metal-oxide-semiconductor gate oxide produced by wet oxidation. On the other hand, the ≡SiOH defect, which was proposed to be an electron or {"}water trap{"} in the oxide (A. Hartstein and D. R. Young, Appl. Phys. Lett., vol. 38, pp. 631, 1981), could not be an electron trap according to the present calculation results.",
keywords = "Charge carrier processes, Dielectric devices, Dielectric substrates, Electron traps, Hydrogen, Luminescence, Oxidation, Oxygen, Physics, Silicon",
author = "Gritsenko, {V. A.} and A. Shaposhnikov and Novikov, {Yu N.} and Baraban, {A. P.} and Hei Wong and Zhidomirov, {G. M.} and M. Roger",
year = "2002",
doi = "10.1109/HKEDM.2002.1029152",
language = "English",
isbn = "780374290",
volume = "2002-January",
publisher = "IEEE",
pages = "39--42",
booktitle = "Proceedings of the IEEE Hong Kong Electron Devices Meeting",
address = "United States",
note = "9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 ; Conference date: 22-06-2002",
}
