Numerical simulation of plasma sheath of non-uniformly biased target in plasma ion implantation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

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Author(s)

  • Xiubo Tian
  • Ricky K.Y. Fu
  • Dixon T.K. Kwok
  • P. K. Chu

Detail(s)

Original languageEnglish
Journal / PublicationIEEE International Conference on Plasma Science
Publication statusPublished - 2002

Conference

Title2002 IEEE International Conference on plasma Science
PlaceCanada
CityBanff, Alta.
Period26 - 30 May 2002

Abstract

Numerical simulations were conducted to investigate the different potential distributions for an insulating sample on a conducting target holder. The surface potential on the sample was assumed to be 0, 1/5, 3/5 and 5/5 of the applied bias, respectively. It was found that the simulation results indicate that the plasma sheath configuration changes considerably and a low potential in the central zone leads to a lower ion dose.