Numerical simulation of plasma sheath of non-uniformly biased target in plasma ion implantation
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal
Author(s)
Detail(s)
| Original language | English |
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| Journal / Publication | IEEE International Conference on Plasma Science |
| Publication status | Published - 2002 |
Conference
| Title | 2002 IEEE International Conference on plasma Science |
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| Place | Canada |
| City | Banff, Alta. |
| Period | 26 - 30 May 2002 |
Link(s)
Abstract
Numerical simulations were conducted to investigate the different potential distributions for an insulating sample on a conducting target holder. The surface potential on the sample was assumed to be 0, 1/5, 3/5 and 5/5 of the applied bias, respectively. It was found that the simulation results indicate that the plasma sheath configuration changes considerably and a low potential in the central zone leads to a lower ion dose.
Citation Format(s)
Numerical simulation of plasma sheath of non-uniformly biased target in plasma ion implantation. / Tian, Xiubo; Fu, Ricky K.Y.; Kwok, Dixon T.K.; Chu, P. K.
In: IEEE International Conference on Plasma Science, 2002.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal
