Numerical simulation of plasma sheath of non-uniformly biased target in plasma ion implantation

Xiubo Tian; Ricky K.Y. Fu; Dixon T.K. Kwok; P. K. Chu

doi:10.1109/PLASMA.2002.1030301

Numerical simulation of plasma sheath of non-uniformly biased target in plasma ion implantation

Xiubo Tian
, Ricky K.Y. Fu
, Dixon T.K. Kwok
, P. K. Chu

Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal

Abstract

Numerical simulations were conducted to investigate the different potential distributions for an insulating sample on a conducting target holder. The surface potential on the sample was assumed to be 0, 1/5, 3/5 and 5/5 of the applied bias, respectively. It was found that the simulation results indicate that the plasma sheath configuration changes considerably and a low potential in the central zone leads to a lower ion dose.

Original language	English
Journal	IEEE International Conference on Plasma Science
DOIs	https://doi.org/10.1109/PLASMA.2002.1030301
Publication status	Published - 2002
Event	2002 IEEE International Conference on plasma Science - Banff, Alta., Canada Duration: 26 May 2002 → 30 May 2002

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@article{bb52a784c64c4f59a135cc46b3c191bb,

title = "Numerical simulation of plasma sheath of non-uniformly biased target in plasma ion implantation",

abstract = "Numerical simulations were conducted to investigate the different potential distributions for an insulating sample on a conducting target holder. The surface potential on the sample was assumed to be 0, 1/5, 3/5 and 5/5 of the applied bias, respectively. It was found that the simulation results indicate that the plasma sheath configuration changes considerably and a low potential in the central zone leads to a lower ion dose.",

author = "Xiubo Tian and Fu, \{Ricky K.Y.\} and Kwok, \{Dixon T.K.\} and Chu, \{P. K.\}",

year = "2002",

doi = "10.1109/PLASMA.2002.1030301",

language = "English",

journal = "IEEE International Conference on Plasma Science",

issn = "0730-9244",

publisher = "IEEE",

note = "2002 IEEE International Conference on plasma Science ; Conference date: 26-05-2002 Through 30-05-2002",

}

TY - JOUR

T1 - Numerical simulation of plasma sheath of non-uniformly biased target in plasma ion implantation

AU - Tian, Xiubo

AU - Fu, Ricky K.Y.

AU - Kwok, Dixon T.K.

AU - Chu, P. K.

PY - 2002

Y1 - 2002

N2 - Numerical simulations were conducted to investigate the different potential distributions for an insulating sample on a conducting target holder. The surface potential on the sample was assumed to be 0, 1/5, 3/5 and 5/5 of the applied bias, respectively. It was found that the simulation results indicate that the plasma sheath configuration changes considerably and a low potential in the central zone leads to a lower ion dose.

AB - Numerical simulations were conducted to investigate the different potential distributions for an insulating sample on a conducting target holder. The surface potential on the sample was assumed to be 0, 1/5, 3/5 and 5/5 of the applied bias, respectively. It was found that the simulation results indicate that the plasma sheath configuration changes considerably and a low potential in the central zone leads to a lower ion dose.

UR - https://www.scopus.com/pages/publications/0036361236

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0036361236&origin=recordpage

U2 - 10.1109/PLASMA.2002.1030301

DO - 10.1109/PLASMA.2002.1030301

M3 - RGC 22 - Publication in policy or professional journal

SN - 0730-9244

JO - IEEE International Conference on Plasma Science

JF - IEEE International Conference on Plasma Science

T2 - 2002 IEEE International Conference on plasma Science

Y2 - 26 May 2002 through 30 May 2002

ER -

Numerical simulation of plasma sheath of non-uniformly biased target in plasma ion implantation

Abstract

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