Nucleation of diamond films by ECR-enhanced microwave plasma chemical vapor deposition
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
Original language | English |
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Pages (from-to) | 1410-1413 |
Journal / Publication | Diamond and Related Materials |
Volume | 8 |
Issue number | 8-9 |
Publication status | Published - Aug 1999 |
Link(s)
Abstract
A novel nucleation technique based on electron cyclotron resonance microwave plasma was developed to enhance the nucleation of diamond. By choosing a suitable experimental condition, a nucleation density higher than 108 nuclei cm-2 was achieved on an untreated, mirror-polished silicon substrate. Uniform diamond films were obtained by combining this nucleation method with subsequent growth by the common microwave plasma chemical vapor deposition. Furthermore, the possibility of this new nucleation method to generate heteroepitaxial diamond nuclei on (001) silicon substrates was explored. © 1999 Elsevier Science S.A. All rights reserved.
Research Area(s)
- Cyclotron resonance, Diamond films, Heteroepitaxy, Nucleation
Citation Format(s)
Nucleation of diamond films by ECR-enhanced microwave plasma chemical vapor deposition. / Sun, C.; Zhang, W. J.; Lee, C. S. et al.
In: Diamond and Related Materials, Vol. 8, No. 8-9, 08.1999, p. 1410-1413.
In: Diamond and Related Materials, Vol. 8, No. 8-9, 08.1999, p. 1410-1413.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review