Nucleation and growth of Si nanowires from silicon oxide

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

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Author(s)

  • N. Wang
  • Y. H. Tang
  • Y. F. Zhang
  • C. S. Lee
  • S. T. Lee

Detail(s)

Original languageEnglish
Journal / PublicationPhysical Review B - Condensed Matter and Materials Physics
Volume58
Issue number24
Publication statusPublished - 15 Dec 1998

Abstract

Nucleation and growth of Si nanowires by laser ablation and thermal evaporation of Si powder sources mixed with SiO2 have been investigated by means of transmission electron microscopy. At the initial nucleation stage, Si oxide vapor condensed on the substrate and formed Si nanoparticles (the nuclei of nanowires). Each Si nanowire nucleus consisted of a polycrystalline Si core containing a high density of defects and a Si oxide shell. A growth mechanism was proposed based on the microstructure and different morphologies of the Si nanowires observed.

Citation Format(s)

Nucleation and growth of Si nanowires from silicon oxide. / Wang, N.; Tang, Y. H.; Zhang, Y. F.; Lee, C. S.; Lee, S. T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 58, No. 24, 15.12.1998.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal