Nucleation and growth of epitaxial silicide in nanowire of silicon

Yi-Chia Chou; Kuo-Chang Lu; K. N. Tu

doi:10.1109/INEC.2010.5424463

Nucleation and growth of epitaxial silicide in nanowire of silicon

Yi-Chia Chou
, Kuo-Chang Lu
, K. N. Tu

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

When two nanowires cross each other, they form a point contact. Point contact reaction between a nano metal wire and a nano Si wire has been studied by using ultra-high vacuum and high resolution transmission electron microscopy. Axel epitaxial growth of nano silicides of NiSi and CoSi₂ in nanowires of Si has been observed. The nucleation stage and stepwise growth stage of the reactive epitaxial growth of nano silicide on nano Si have been measured. A repeating event of homogeneous nucleation has been found, which enables us to estimate the number of molecules in a critical nucleus to be about 10 using the Zeldovich factor. A comparison to heterogeneous nucleation will be made. The nucleation-controlled or supply-controlled growth mode of point contact reactions is different from the well-known diffusion-controlled and interfacial-reaction-controlled modes of growth in thin film and bulk samples. © 2010 IEEE.

Original language	English
Title of host publication	INEC 2010 - 2010 3^rd International Nanoelectronics Conference
Subtitle of host publication	Proceedings
Editors	Paul K Chu
Publisher	IEEE
Pages	26-27
ISBN (Electronic)	978-1-4244-3544-9
ISBN (Print)	9781424435449
DOIs	https://doi.org/10.1109/INEC.2010.5424463
Publication status	Published - 2010
Externally published	Yes
Event	3rd IEEE International NanoElectronics Conference (INEC 2010) - City University of Hong Kong, Hong Kong, China Duration: 3 Jan 2010 → 8 Jan 2010 http://www.cityu.edu.hk/ieeeinec/

Publication series

Name	INEC - International Nanoelectronics Conference, Proceedings
ISSN (Print)	2159-3523
ISSN (Electronic)	2159-3531

Conference

Conference	3rd IEEE International NanoElectronics Conference (INEC 2010)
Place	China
City	Hong Kong
Period	3/01/10 → 8/01/10
Internet address	http://www.cityu.edu.hk/ieeeinec/

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@inproceedings{618699b934a542f1adc16f42eb414e11,

title = "Nucleation and growth of epitaxial silicide in nanowire of silicon",

abstract = "When two nanowires cross each other, they form a point contact. Point contact reaction between a nano metal wire and a nano Si wire has been studied by using ultra-high vacuum and high resolution transmission electron microscopy. Axel epitaxial growth of nano silicides of NiSi and CoSi2 in nanowires of Si has been observed. The nucleation stage and stepwise growth stage of the reactive epitaxial growth of nano silicide on nano Si have been measured. A repeating event of homogeneous nucleation has been found, which enables us to estimate the number of molecules in a critical nucleus to be about 10 using the Zeldovich factor. A comparison to heterogeneous nucleation will be made. The nucleation-controlled or supply-controlled growth mode of point contact reactions is different from the well-known diffusion-controlled and interfacial-reaction-controlled modes of growth in thin film and bulk samples. {\textcopyright} 2010 IEEE.",

author = "Yi-Chia Chou and Kuo-Chang Lu and Tu, \{K. N.\}",

year = "2010",

doi = "10.1109/INEC.2010.5424463",

language = "English",

isbn = "9781424435449",

series = "INEC - International Nanoelectronics Conference, Proceedings",

publisher = "IEEE",

pages = "26--27",

editor = "Chu, \{Paul K\}",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference",

address = "United States",

note = "3rd IEEE International NanoElectronics Conference (INEC 2010) ; Conference date: 03-01-2010 Through 08-01-2010",

url = "http://www.cityu.edu.hk/ieeeinec/",

}

Chou, Y-C, Lu, K-C & Tu, KN 2010, Nucleation and growth of epitaxial silicide in nanowire of silicon. in PK Chu (ed.), INEC 2010 - 2010 3^rd International Nanoelectronics Conference: Proceedings. INEC - International Nanoelectronics Conference, Proceedings, IEEE, pp. 26-27, 3rd IEEE International NanoElectronics Conference (INEC 2010), Hong Kong, China, 3/01/10. https://doi.org/10.1109/INEC.2010.5424463

Nucleation and growth of epitaxial silicide in nanowire of silicon. / Chou, Yi-Chia; Lu, Kuo-Chang; Tu, K. N.
INEC 2010 - 2010 3^rd International Nanoelectronics Conference: Proceedings. ed. / Paul K Chu. IEEE, 2010. p. 26-27 (INEC - International Nanoelectronics Conference, Proceedings).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Nucleation and growth of epitaxial silicide in nanowire of silicon

AU - Chou, Yi-Chia

AU - Lu, Kuo-Chang

AU - Tu, K. N.

PY - 2010

Y1 - 2010

N2 - When two nanowires cross each other, they form a point contact. Point contact reaction between a nano metal wire and a nano Si wire has been studied by using ultra-high vacuum and high resolution transmission electron microscopy. Axel epitaxial growth of nano silicides of NiSi and CoSi2 in nanowires of Si has been observed. The nucleation stage and stepwise growth stage of the reactive epitaxial growth of nano silicide on nano Si have been measured. A repeating event of homogeneous nucleation has been found, which enables us to estimate the number of molecules in a critical nucleus to be about 10 using the Zeldovich factor. A comparison to heterogeneous nucleation will be made. The nucleation-controlled or supply-controlled growth mode of point contact reactions is different from the well-known diffusion-controlled and interfacial-reaction-controlled modes of growth in thin film and bulk samples. © 2010 IEEE.

AB - When two nanowires cross each other, they form a point contact. Point contact reaction between a nano metal wire and a nano Si wire has been studied by using ultra-high vacuum and high resolution transmission electron microscopy. Axel epitaxial growth of nano silicides of NiSi and CoSi2 in nanowires of Si has been observed. The nucleation stage and stepwise growth stage of the reactive epitaxial growth of nano silicide on nano Si have been measured. A repeating event of homogeneous nucleation has been found, which enables us to estimate the number of molecules in a critical nucleus to be about 10 using the Zeldovich factor. A comparison to heterogeneous nucleation will be made. The nucleation-controlled or supply-controlled growth mode of point contact reactions is different from the well-known diffusion-controlled and interfacial-reaction-controlled modes of growth in thin film and bulk samples. © 2010 IEEE.

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U2 - 10.1109/INEC.2010.5424463

DO - 10.1109/INEC.2010.5424463

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781424435449

T3 - INEC - International Nanoelectronics Conference, Proceedings

SP - 26

EP - 27

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference

A2 - Chu, Paul K

PB - IEEE

T2 - 3rd IEEE International NanoElectronics Conference (INEC 2010)

Y2 - 3 January 2010 through 8 January 2010

ER -

Nucleation and growth of epitaxial silicide in nanowire of silicon

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