TY - JOUR
T1 - Nucleation and growth of diamond films on aluminum nitride by hot filament chemical vapor deposition
AU - Wang, W. L.
AU - Zhang, R. Q.
AU - Liao, K. J.
AU - Sun, Y. W.
AU - Wang, B. B.
PY - 2000/9
Y1 - 2000/9
N2 - Nucleation and growth of diamond films on aluminum nitride (ALN) coatings were investigated by scanning electron microscopy, Raman spectroscopy and scratch test. ALN films were grown in a magnetron sputtering deposition. The substrates were Si(111) and tungsten carbide (WC). Chemical vapor deposition (CVD) diamond films were deposited on ALN films by hot filament CVD. The nucleation density of diamond on ALN films was found to be approximately 105 cm-2, whereas over 1010 cm-2 after negative bias pre-treatment for 35 min was -320 V, and 250 mA. The experimental studies have shown that the stresses were greatly minimized between diamond overlay and ALN films as compared with WC substrate. The results obtained have also confirmed that the ALN, as buffer layers, can notably enhance the adhesion force of diamond films on the WC.
AB - Nucleation and growth of diamond films on aluminum nitride (ALN) coatings were investigated by scanning electron microscopy, Raman spectroscopy and scratch test. ALN films were grown in a magnetron sputtering deposition. The substrates were Si(111) and tungsten carbide (WC). Chemical vapor deposition (CVD) diamond films were deposited on ALN films by hot filament CVD. The nucleation density of diamond on ALN films was found to be approximately 105 cm-2, whereas over 1010 cm-2 after negative bias pre-treatment for 35 min was -320 V, and 250 mA. The experimental studies have shown that the stresses were greatly minimized between diamond overlay and ALN films as compared with WC substrate. The results obtained have also confirmed that the ALN, as buffer layers, can notably enhance the adhesion force of diamond films on the WC.
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U2 - 10.1016/S0925-9635(00)00321-6
DO - 10.1016/S0925-9635(00)00321-6
M3 - RGC 21 - Publication in refereed journal
SN - 0925-9635
VL - 9
SP - 1660
EP - 1663
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 9
T2 - 5th IUMRS International Conference on Advanced Materials (IUMRS-ICAM'99)
Y2 - 13 June 1999 through 18 June 1999
ER -