Nucleation and growth of {113} defects and {111} dislocation loops in silicon-implanted silicon

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)431-436
Journal / PublicationMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1997
Externally publishedYes


TitleProceedings of the 1997 MRS Spring Symposium
CitySan Francisco, CA, USA
Period1 - 4 April 1997


Plan-view and cross-sectional transmission electron microscopy have been used to study the microstructural characterization of the nucleation and growth behavior of {113} rodlike defects, as well as their correlation with {111} dislocation loops in silicon amorphized with 50 keV, 3.6×1014 Si/cm2, 8.0 mA and annealed by rapid thermal anneals at temperatures from 500 °C to 1100 °C for various times. We found that the nucleations of the {113} rodlike defects and {111} dislocation loops are two separate processes. At the beginning of anneals, excess interstitials accumulate and form circular interstitial clusters at the preamorphous/crystalline interface at as low as 600 °C for 1 s. Then these interstitial clusters grow along the 〈110〉 direction to form {113} rodlike defects. Later, while the {113} defects have begun to grow and/or dissolve into matrix, the {111} faulted Frank dislocation loops start to form. We also found that the initial interstitial clusters prefer to grow along the 〈110〉 directions inclined to the implantation surface.

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