@inproceedings{ade104481e9c49ec95c1c607eb0535f9,
title = "NOVEL SILICIDED SHALLOW JUNCTION TECHNOLOGY FOR CMOS VLSI.",
abstract = "A novel technique for the fabrication of shallow, silicided p plus -n junctions with excellent electrical characteristics has been developed. The technique utilizes the ion implantation of dopants into silicide layers formed by ion-beam mixing with Si ions and low temperature annealing, and the subsequent drive-in of implanted dopants into the Si substrates to form shallow junctions. This technique can be easily applied to the fabrication of MOSFETs in a self-aligned fashion, and can have a significant impact on CMOS VLSI technology.",
author = "Kwong, {D. L.} and Ku, {Y. H.} and Lee, {S. K.} and Alvi, {N. S.} and P. Chu and P. Zhou and White, {J. M.}",
year = "1986",
language = "English",
isbn = "931837375",
volume = "71",
publisher = "Materials Research Soc",
pages = "379--385",
booktitle = "Materials Research Society Symposia Proceedings",
}